2SC1815-BL-T92-E-K

UNISONIC TECHNOLOGIES CO., LTD 2SC1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES * Collector-Emitter voltage: BVCEO=50V * Collector current up to 150mA * High hFE linearity * Complimentary to UTC 2SA1015 1 TO-92 *Pb-free plating product number: 2SC1815L ORDERING INFORMATION Order Number Normal Lead Free Plating 2SC1815-x-T92-A-B 2SC1815L-x-T92-A-B 2SC1815-x-T92-A-K 2SC1815L-x-T92-A-K Package TO-92 TO-92 Pin Assignment 1 2 3 E C B E C B Packing Tape Box Bulk 2SC1815L-x-T92-A-B (1)Packing Type (2)Pin Assignment (3)Package Type (4)Rank (5)Lead Plating (1) (2) (3) (4) (5) B: Tape Box, K: Bulk refer to Pin Assignment T92: TO-92 x: refer to Classification of hFE1 L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R201-006,D 2SC1815 PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector dissipation(Ta=25℃) NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25℃,unless otherwise specified ) SYMBOL VCBO VCEO VEBO IC IB PC RATINGS 60 50 5 150 50 400 UNIT V V V mA mA mW ℃ ℃ Junction Temperature TJ +125 Storage Temperature TSTG -55 ~ +125 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified) PARAMETER Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain(note) Current Gain Bandwidth Product Output Capacitance Noise Figure SYMBOL ICBO IEBO VCE(SAT) VBE(SAT) hFE1 hFE2 fT Cob NF TEST CONDITIONS VCB=60V, IE=0 VEB=5V, IC=0 IC=100mA, IB=10mA IC=100mA, IB=10mA VCE=6V, IC=2mA VCE=6V, IC=150mA VCE=10V, IC=50mA VCB=10V, IE=0, f=1MHz IC=-0.1mA, VCE=6V RG=10kΩ, f=100Hz MIN TYP MAX 100 100 0.25 1.0 700 UNIT nA nA V V 0.1 120 25 80 2.0 1.0 3.0 1.0 MHz pF dB CLASSIFICATION OF hFE1 RANK RANGE Y 120-240 GR 200-400 BL 350-700 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R201-006,D 2SC1815 TYPICAL CHARACTERISTICS Fig.1 Static characteristics 100 NPN EPITAXIAL SILICON TRANSISTOR Fig.2 DC current Gain 103 VCE=6V Collector Current, I C (mA) DC Current Gain, hFE 20 80 60 40 20 0 IB=300µA IB =250µA IB=200µA I B=150µA I B=100µA I B=50µA 0 4 8 12 16 Collector-Emitter Voltage (V) 102 101 100 10-1 100 101 102 103 Collector Current, IC (mA) Fig.4 Saturation Voltage Fig.3 Base-Emitter on Voltage 102 104 Collector Current, I C (mA) VCE=6V 10 1 Saturation Voltage (mV) IC=10*I B VBE(SAT ) 103 100 102 VCE(SAT) 10-1 0 0.2 0.4 0.6 0.8 Base-Emitter Voltage (V) 1.0 101 -1 10 100 101 102 103 Collector Current, IC (mA) Fig.5 Current Gain-Bandwidth Product 10 3 Fig.6 Collector Output Capacitance 102 Current Gain-Bandwidth Product, f T(MHz) Capacitance, C ob (pF) 102 VCE=6V 10 1 f=1MHz I E=0 101 100 100 10-1 100 101 102 10-1 100 101 102 103 Collector Current, I C (mA) Collector-Base Voltage (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R201-006,D 2SC1815 NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R201-006,D