2SC2482

UTC 2SC2482 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR APPLICATIONS *HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS *COLOR TV HORIZ. DRIVER APPLICATIONS *COLOR TV CHROMA OUTPUT APPLICATIONS 1 FEATURES *High Voltage :V(BR)CEO= 300V *Small Collector Output Capacitance: Cob=3.0pF(Typ.) TO-92NL 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Ic IB Pc Tj TSTG LIMITS 300 300 7 100 50 900 150 -55 ~ +150 UNIT V V V mA mA mW °C °C ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base- Emitter Saturation Voltage Transition Frequency Collector Output Capacitance SYMBOL ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT Cob TEST CONDITIONS VCB=240V IE= 0 VEB= 7V Ic=0 VCE=10V,Ic=4mA VCE=10V,Ic=20mA Ic=10mA,IB=1mA Ic=10mA,IB=1mA VCE=10V, Ic=20mA VCB=20V, IE= 0, f=1MHz MIN TYP MAX 1.0 1.0 UNIT μA μA 20 30 150 1.0 1.0 3.0 50 V V MHz pF UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R211-015,A UTC 2SC2482 NPN EPITAXIAL SILICON TRANSISTOR hFE -Ic 500 DC Current Gain hFE 3 2 1 0.6 0.4 IB=0.2mA 300 Common Emitter Ta=25 ℃ V CE=20V ELECTRICAL CHARACTERISTICS CURVES Ic-V CE 4 Collector Current Ic (mA) Common Emitter Ta=25 ℃ 6 100 80 60 40 20 0 0 120 100 V CE =10V 50 30 10 0.3 V CE =5V 1 3 10 30 Collector Current Ic (mA) V CE(sat)-Ic Common Emitter Ta=25 ℃ 100 4 8 12 16 Collector -Emitter Voltage Vc hFE -Ic 20 E(V) 24 500 300 DC Current Gain hFE 5 Collector-Emiitter Saturation Voltage V CE (sat)(V) 3 1 Common Emitter V CE =10V Ta=100 ℃ 100 0.5 0.3 0.1 50 30 10 0.3 Ta=25 ℃ Ta=-25 ℃ IC/IB=10 2 1 5 1 10 30 3 Collector Current Ic (mA) V CE (sat)-Ic 100 0.05 0.3 10 30 3 Collector Current Ic (mA) V BE(sat)-Ic 100 Base-Emitter Saturation Voltage V BE(sat)(V) Collector-Emiitter Saturation Voltage V CE(sat)(V) 5 3 1 5 3 Common Emitter IC /IB=5 Common Emitter Ta=25 ℃ IC /IB=5 1 0.5 0.3 0.1 Ta=100 ℃ Ta=-25 ℃ 100 0.5 0.3 0.1 0.3 0.05 0.3 Ta=25 ℃ 1 3 10 30 Collector Current Ic (mA) 1 10 30 3 Collector Current Ic (mA) 100 UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R211-015,A UTC 2SC2482 100 Collector Current Ic (mA) 80 60 Ta=100 ℃ 40 20 0 0.2 NPN EPITAXIAL SILICON TRANSISTOR Ic-V BE 500 Transition Frequency fT(MHz) fT -Ic 300 Common Emitter Ta=25 ℃ Common Emitter V CE=10 V Ta=-25 ℃ 100 V CE=20V 50 30 10 0.3 V CE=5V V CE =10V 1 3 10 30 Collector Current Ic (mA) 100 Ta=25 ℃ 0.4 0.6 0.8 Base -Emitter Voltage V Safe Operating Area 1.0 1.2 BE(V) 300 Ic MAX.(PULSED)* Ic MAX.(CONINUOUS) 30 μs* 50 Collector Output Capacitance Cob(pF) 1ms 10ms* Collector Current-Ic(mA) 100ms* 500ms* 30 Cob-V CB IE=0 f=1MHz Ta=25 ℃ Collector Current Ic(mA) 100 50 PT=1s DC Operation 30 Ta=25 ℃ 10 5 2 3 10 5 3 1 1 *Single Nonrepetitive Pulse Ta=25 ℃ Curves Must Be Derated Linearly With Increase In Temperature V CEO M AX 10 30 100 300 Collector-Emitter Voltage V CE(V) 3 10 30 100 300 Collector-Base Voltage V CB(V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R211-015,A