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2SC2655-Y-T9N-R

2SC2655-Y-T9N-R

  • 厂商:

    UTC(友顺)

  • 封装:

  • 描述:

    2SC2655-Y-T9N-R - POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS - Unisonic Technologies

  • 数据手册
  • 价格&库存
2SC2655-Y-T9N-R 数据手册
UNISONIC TECHNOLOGIES CO., LTD 2SC2655 POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES *Low saturation voltage VCE(SAT)= 0.5V (Max.) *High speed switching time tstg=1.0µs (Typ.) NPN SILICON TRANSISTOR 1 TO-92NL *Pb-free plating product number: 2SC2655L ORDERING INFORMATION Order Number Normal Lead Free Plating 2SC2655-x-T9N-B 2SC2655L-x-T9N-B 2SC2655-x-T9N-K 2SC2655L-x-T9N-K 2SC2655-x-T9N-R 2SC2655L-x-T9N-R Package TO-92NL TO-92NL TO-92NL Pin Assignment 1 2 3 E C B E C B E C B Packing Tape Box Bulk Tape Reel 2C2655L-x-T9N-K (1)Packing Type (2)Package Type (3)Rank (4)Lead Plating (1) B: Tape Box, K: Bulk, R: Tape Reel (2) T9N: TO-92NL (3) refer to Classification of hFE(1) (4) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R211-013,C 2SC2655 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETER SYMBOL RATING UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current Ic 2 A Collector Current(Pulse) Icp* 3 A Base Current IB 0.5 A Collector Power Dissipation Pc 900 mW Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Note: * PW≦16ms, Duty Cycle≦50%. 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise specified) PARAMETER Collector Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base- Emitter Saturation Voltage Transition Frequency Collector Output Capacitance SYMBOL BVCEO ICBO IEBO hFE(1) hFE(2) VCE(SAT) VBE(SAT) fT Cob TEST CONDITIONS IC= 10mA, IB= 0 VCB=50V, IE= 0 VEB= 5V, IC=0 VCE=2V, Ic=0.5A VCE=2V, Ic=1.5A IC=1A, IB=0.05A IC=1A, IB=0.05A VCE=2V, IC=0.5A VCB= 10V, IE= 0, f=1MHz 20μs INPUT IB1 IB2 IB2 Vcc=30 V IB1 OUTPUT 10Ω MIN 50 TYP MAX 1.0 1.0 240 0.5 1.2 UNIT V µA µA 70 40 100 30 V V MHz pF Switching Time(Turn-on Time) tON 0.1 µS IB1= -IB2=0.05A DUTY CYCLE≦1% CLASSIFICATION OF hFE(1) RANK RANGE O 70-140 Y 120-240 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R211-013,C 2SC2655 TYPICAL CHARACTERISTICS NPN SILICON TRANSISTOR Ic-VCE 25 20 18 15 Common Emitter Ta=25°C 12 1.6 1.2 0.8 0.4 0 0 4 IB=2mA 2 4 6 8 10 12 14 Collector -Emitter Voltage, VcE (V) 10 8 6 Collector -Emitter Voltage, Vc E(V) VCE -Ic 1 0.8 0.6 0.4 30 0.2 0 0 40 IB=5mA 10 20 Common Emitter Ta=25°C 2.4 Collector Current, Ic (A) 2.0 0.4 1.6 0.8 1.2 2.0 Collector Current, Ic (A) 2.4 VCE -Ic Collector -E mitter Voltage, Vc E ( V) Collector -Emitter Voltage, Vc E(V) VCE -Ic 1 0.8 0.6 0.4 0.2 0 0 I B=5mA Common EmitterTa= -55 °C 1 0.8 0.6 0.4 0.2 0 0 Common Emitter Ta=100°C 0.4 0.8 1.2 1.6 2.0 2.4 IB =5mA 10 20 30 40 10 20 30 40 50 0.4 0.8 1.2 1.6 2.0 2.4 Collector Current, Ic (A) Collector Current, Ic (A) hFE -Ic 1000 500 300 100 50 30 10 0.01 Ta=-55°C Ta=25°C Collector Emitter Saturation Voltage, VCE(SAT) (V) DC Current Gain, hFE VCE(SAT) -Ic 1 Common Emitter Ic/IB=20 Common Emitter VCE=2V Ta=100°C 0.5 0.3 0.1 Ta=100°C 0.05 Ta=25°C Ta=-55°C 0.03 0.1 0.3 1 0.02 0.01 0.03 0.05 0.1 0.3 0.5 1 Collector Current, Ic (A) Collector Current, Ic (A) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R211-013,C 2SC2655 TYPICAL CHARACTERISTICS(Cont.) VBE(SAT ) -Ic 5 NPN SILICON TRANSISTOR Ic-VBE 2.0 Common Emitter VCE=2 V 1.5 Ta=100°C 1.0 Ta=25°C 0.5 Ta=-55°C Base Emitter Saturation Voltage, V BE(SAT) Ta=-55°C 1 0.5 0.3 0.1 0.01 Ta=25°C Ta=100° C Collector Current, Ic (A) 3 Common Emitter Ic/IB=20 0.03 0.05 0.1 0.3 1 0 0 0.4 0.8 1.2 1.6 2.0 Collector Current, Ic (A) Safe Operating Area 5 3 Base -Emitter Voltage, VBE (V) Pc-Ta Collector Power Dissipation, Pc (mW) Ic MAX.(PULSED )* 1000 800 600 400 200 0 0 1ms* 10ms* Collector Current, Ic(A) 1 0.5 PT=1s 0.3 DC Operation Ta=25°C 0.1 1s* Single Nonrepetitive Pulse Ta=25 °C 0.05 0.0 Curves Must Be Derated Linearly With Increase In Temperature 3 0.0 VCEO M AX. 10.2 0.5 1 3 10 30 Collector Current-Ic(mA) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw M AX .( S) U O I c I NU N CO 100ms* 40 80 120 160 200 240 100 Collector-Emitter Voltage, VCE(V) Ambient Temperature,Ta ( °C) 4 of 4 QW-R211-013,C
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