UNISONIC TECHNOLOGIES CO., LTD 2SC2688
NPN SILICON TRANSISTOR
DESCRIPTION
The UTC 2SC2688 is designed for use in Color TV chroma output circuits.
NPN SILICON TRANSISTOR
FEATURES
* High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. (E-B reverse bias, C=2300pF) * Low Cre, High fT Cre ≤3.0 pF (VCB=30V) fT ≥50MHz (VCE=30V, IE=-10mA)
ORDERING INFORMATION
Ordering Number Lead Free Halogen Free 2SC2688L-x-T60-K 2SC2688G-x-T60-K 2SC2688L-x-T6C-K 2SC2688G-x-T6C-K Package TO-126 TO-126C Pin Assignment 1 2 3 E C B E C B Packing Bulk Bulk
www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 5
QW-R204-023,C
2SC2688
ABSOLUTE MAXIMUM RATING
PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current SYMBOL VCBO VCEO VEBO IC
NPN SILICON TRANSISTOR
RATINGS UNIT 300 V 300 V 5.0 V 200 mA Ta=25℃ 1.25 W Total Power Dissipation PD TC=25℃ 10 W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
PARAMETER SYMBOL Collector Saturation Voltage VCE(SAT) Collector Cutoff Current ICBO Emitter Cutoff Current IEBO DC Current Gain hFE Gain Bandwidth Product fT Feedback Capacitance Cre Note 1. * Pulsed PW ≤ 350µs, Duty Cycle ≤ 2% TEST CONDITIONS IC=20mA, IB=5.0mA VCB=200V, IE=0 VEB=5.0V, IC=0 VCE=10V, IC=10mA (Note 1) VCE=30V, IE=-10mA VCB=30V, IE=0, f=1.0MHz MIN TYP MAX 1.5 100 100 250 3 UNIT V nA nA MHz pF
40 50
80 80
CLASSIFICATION OF hFE
Rank Range N 40 ~ 80 M 60 ~ 120 L 100 ~ 200 K 160 ~ 250
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R204-023,C
2SC2688
NPN SILICON TRANSISTOR
BURNOUT TEST CIRCUIT BY DISCHARGE OF CAPACITOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 5
QW-R204-023,C
2SC2688
TYPICAL CHARACTERISTICS (Ta=25℃)
NPN SILICON TRANSISTOR
Total Power Dissipation, PD (W)
Collector Current, IC (mA)
Collector Current vs. Base to Emitter Voltage 70 VCE=10V 60 50 40 30 20 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Base to Emitter Voltage, VBE (V)
Collector Current, IC (mA) DC Current Gain vs. Collector Current VCE=10V 200 100 50 10 5 1 0.1 0.5 1 5 10 50 100 5001000 Collector Current, IC (mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Total Power Dissipation, PD (W)
4 of 5
QW-R204-023,C
2SC2688
TYPICAL CHARACTERISTICS
Base Saturation Voltage, VBE (SAT) (V) Collector Saturation Voltage, VCE (SAT) (V)
NPN SILICON TRANSISTOR
Feedback Capacitance, Cre (pF)
Feedback Capacitance vs.Collector to Base Voltage IE=0 f=1MHz
10 5
1 1 5 10 50 100 Collector to Base Voltage, VCB (V)
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Gain Bandwidth Product, fT (MHz)
5 of 5
QW-R204-023,C
很抱歉,暂时无法提供与“2SC2688G-X-T6C-K”相匹配的价格&库存,您可以联系我们找货
免费人工找货