UNISONIC TECHNOLOGIES CO., LTD 2SC2712
AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR
FEATURES
* High Voltage and High Current: VCEO=50V, IC=150mA (Max.) * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise
NPN SILICON TRANSISTOR
Lead-free: 2SC2712L Halogen-free:2SC2712G
ORDERING INFORMATION
Normal 2SC2712-x-AE3-R 2SC2712-x-AL3-R Ordering Number Lead Free Halogen Free 2SC2712L-x-AE3-R 2SC2712G-x-AE3-R 2SC2712L-x-AL3-R 2SC2712G-x-AL3-R Package SOT-23 SOT-323 Pin Assignment 1 2 3 E B C E B C Packing Tape Reel Tape Reel
MARKING
2SC2712-Y 2SC2712-G 2SC2712-L
LY
L: Lead Free G: Halogen Free
LG
L: Lead Free G: Halogen Free
LL
L: Lead Free G: Halogen Free
www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd
1 of 4
QW-R206-029.E
2SC2712
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°С, unless otherwise stated)
PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current IC 150 mA Base Current IB 30 mA Collector Power Dissipation PC 150 mW Junction Temperature TJ +125 °С Storage Temperature TSTG -55 ~ +125 °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise stated)
PARAMETER Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transistor Frequency Collector Output Capacitance Noise Figure SYMBOL ICBO IEBO hFE VCE(SAT) fT Cob NF TEST CONDITIONS VCB=60V, IE=0 VEB=5V, IC=0 VCE=6V, IC=2mA IC=100mA, IB=10mA VCE=10V, IC=1mA VCB=10V, IE=0, f=1MHz VCE=6V, IC=0.1mA f=1kHz, Rg=10KΩ MIN TYP MAX 0.1 0.1 700 0.25 3.5 10 UNIT μA μA V MHz pF dB
70 0.1 80 2.0 1.0
CLASSIFICATION OF hFE
RANK RANGE Y 120~240 G 200~400 L 350~700
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R206-029.E
2SC2712
TYPICAL CHARACTERISTICS
NPN SILICON TRANSISTOR
Collector Current, IC (mA)
DC Current Gain, hFE
3000 Transistion Frequency, fT (MHz) 1000 500 300 100 50 30
fT - IC Common Emitter VCE=10V Ta=25°С
3000 Transistion Frequency, fT (MHz)
IB - VBE
Common Emitter 1000 VCE=10V 500 300 100 50 30 10 5 3 1 0.5 0.3 0
Ta=100°С 25°С -25°С
10 0.1 0.3 1 3 10 30 100 300 Collector Current, IC (mA) h Parameter, IC Common Emitter BL VCE=12V, f=270Hz, Ta=25°С GR Y O BL hie×KΩ Y GR BL O Y GR hoe×µS O
0.2 0.4 0.6 0.8 1.0 1.2 Base-Emitter Voltage, VBE (V)
2000 1000 500 300 h Parameter 100 50 30 10 5 3 1 0.5 0.3 0.1 0.1
h Parameter, VCE 2000 Common Emitter 1000 500 IC=2mA, Ta=25°С, f=270Hz 300 h Parameter 100 50 30 10 BL 5 3 GR 1Y 0.5 O 0.3 O Y GR BL
hie×KΩ
BL GR hre Y O
hoe×µS
BL GR Y
hre×10-4
O
Y BL GR h ×10-4 re
O
0.3 1 3 10 30 Collector Current, IC (mA)
0.1 100 300 0.5 1 3 10 30 Collector-Emitter Voltage, VCE (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R206-029.E
2SC2712
TYPICAL CHARACTERISTICS(Cont.)
250 200 150 100 50 0 0 PC - Ta
NPN SILICON TRANSISTOR
25 50 75 100 125 Ambient Temperature, Ta (°С)
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 4
QW-R206-029.E
很抱歉,暂时无法提供与“2SC2712L-X-AL3-R”相匹配的价格&库存,您可以联系我们找货
免费人工找货