2SC2712_09

UNISONIC TECHNOLOGIES CO., LTD 2SC2712 AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA (Max.) * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise NPN SILICON TRANSISTOR Lead-free: 2SC2712L Halogen-free:2SC2712G ORDERING INFORMATION Normal 2SC2712-x-AE3-R 2SC2712-x-AL3-R Ordering Number Lead Free Halogen Free 2SC2712L-x-AE3-R 2SC2712G-x-AE3-R 2SC2712L-x-AL3-R 2SC2712G-x-AL3-R Package SOT-23 SOT-323 Pin Assignment 1 2 3 E B C E B C Packing Tape Reel Tape Reel MARKING 2SC2712-Y 2SC2712-G 2SC2712-L LY L: Lead Free G: Halogen Free LG L: Lead Free G: Halogen Free LL L: Lead Free G: Halogen Free www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd 1 of 4 QW-R206-029.E 2SC2712 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°С, unless otherwise stated) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current IC 150 mA Base Current IB 30 mA Collector Power Dissipation PC 150 mW Junction Temperature TJ +125 °С Storage Temperature TSTG -55 ~ +125 °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise stated) PARAMETER Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transistor Frequency Collector Output Capacitance Noise Figure SYMBOL ICBO IEBO hFE VCE(SAT) fT Cob NF TEST CONDITIONS VCB=60V, IE=0 VEB=5V, IC=0 VCE=6V, IC=2mA IC=100mA, IB=10mA VCE=10V, IC=1mA VCB=10V, IE=0, f=1MHz VCE=6V, IC=0.1mA f=1kHz, Rg=10KΩ MIN TYP MAX 0.1 0.1 700 0.25 3.5 10 UNIT μA μA V MHz pF dB 70 0.1 80 2.0 1.0 CLASSIFICATION OF hFE RANK RANGE Y 120~240 G 200~400 L 350~700 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R206-029.E 2SC2712 TYPICAL CHARACTERISTICS NPN SILICON TRANSISTOR Collector Current, IC (mA) DC Current Gain, hFE 3000 Transistion Frequency, fT (MHz) 1000 500 300 100 50 30 fT - IC Common Emitter VCE=10V Ta=25°С 3000 Transistion Frequency, fT (MHz) IB - VBE Common Emitter 1000 VCE=10V 500 300 100 50 30 10 5 3 1 0.5 0.3 0 Ta=100°С 25°С -25°С 10 0.1 0.3 1 3 10 30 100 300 Collector Current, IC (mA) h Parameter, IC Common Emitter BL VCE=12V, f=270Hz, Ta=25°С GR Y O BL hie×KΩ Y GR BL O Y GR hoe×µS O 0.2 0.4 0.6 0.8 1.0 1.2 Base-Emitter Voltage, VBE (V) 2000 1000 500 300 h Parameter 100 50 30 10 5 3 1 0.5 0.3 0.1 0.1 h Parameter, VCE 2000 Common Emitter 1000 500 IC=2mA, Ta=25°С, f=270Hz 300 h Parameter 100 50 30 10 BL 5 3 GR 1Y 0.5 O 0.3 O Y GR BL hie×KΩ BL GR hre Y O hoe×µS BL GR Y hre×10-4 O Y BL GR h ×10-4 re O 0.3 1 3 10 30 Collector Current, IC (mA) 0.1 100 300 0.5 1 3 10 30 Collector-Emitter Voltage, VCE (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R206-029.E 2SC2712 TYPICAL CHARACTERISTICS(Cont.) 250 200 150 100 50 0 0 PC - Ta NPN SILICON TRANSISTOR 25 50 75 100 125 Ambient Temperature, Ta (°С) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R206-029.E