2SC2881

UTC 2SC2881 NPN EPITAXIAL SILICON TRANSISTOR VOLTAGE AMPLIFIER APPLICATIONS POWER AMPLIFIER APPLICATIONS FEATURES * High voltage: VCEO= 120V * High transition frequency: fT=120MHz(typ.) * Pc=1.0 ~ 2.0 W(mounted on ceramic substrate) * Complementary to 2SA1201 1 SOT-89 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current SYMBOL RATINGS 120 120 5 800 160 500 1000 150 -55 ~ 150 UNIT V V V mA mA mW °C °C VCBO VCEO VEBO IC IB PC Collector power dissipation PC(Note 1) Junction temperature Tj Storage temperature range Tstg Note 1: Mounted on ceramic substrate( 250mm2×0.8t ) ELECTRICAL CHARACTERISTICS (Ta=25℃) PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance SYMBOL V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE fT Cob TEST CONDITION IC=10mA, IB=0 IE=1mA, Ic=0 VCB=120V, IE=0 VEB=5V, IC=0 VCE=5V, IC=100mA IC=500mA, IB=50mA VCE=5V, IC=500mA VCE=5V, IC=100mA VCB=10V, f=1MHz, IE=0 MIN 120 5 TYP MAX UNIT V V μA μA V V MHz pF 80 0.1 0.1 240 1.0 1.0 120 30 CLASSIFICATION OF hFE RANK RANGE O 80 - 160 Y 120 - 240 UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R208-032,A UTC 2SC2881 NPN EPITAXIAL SILICON TRANSISTOR TYPICAL PERFORMANCE CHARACTERISTICS 800 50 20 Collector current, Ic (mA) 600 Ic - VCE 10 5 3 2 200 IRL=8次 B=1mA 0 0 12 8 4 Collector-emitter voltage VCE (V) VCE(sat) - Ic Common emitter Ic/IB=10 Collector current, Ic (A) 16 Common emitter Ta=25℃ Collector current, Ic (mA) 1000 500 300 100 50 30 -25 RL=8次 Ta=100℃ hFE - Ic Common emitter VCE=5V 25 400 0 10 3 30 100 300 10 Collector current Ic (mA) Ic - VBE Common emitter VCE=5V 1000 1 Collector -emitter saturation voltage, VCE (sat) (V) 0.5 0.3 1.0 0.8 0.6 0.4 0.2 0 RL=8 ℃ Ta=100次 25 -25 0.1 RL=8次 Ta=100℃ 25 0.05 0.03 3 10 -25 30 100 300 1000 0 Collector current, Ic (mA) 3000 Safe Operating Area Ic max (pulse)* 1.0 0.4 0.6 0.2 0.8 Base-emitter voltage VBE (V) Pc - Ta (1) 1.2 1.2 Collector power dissipation, Pc (W) 1ms* 1.0 0.8 0.6 0.4 0.2 0 (2) 1000 Ic max (continuous) 500 300 Collector current, Ic (mA) 100 50 30 10 5 3 DC operation Ta=25℃ 10ms* (1) Mounted on ceramic substrate 2 ( 250mm × 0.8t ) (2) No heat sink 100ms* 1 0.3 *:Single nonrepetitive pulse Ta=25℃ Curves must be derated linearly with increase in temperature Tested without a substrate 0 20 40 60 80 100 120 140 160 Ambient temperature, Ta (℃) 300 3 10 100 30 1 Collector-emitter voltage, VCE (V) UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R208-032,A UTC 2SC2881 NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO., LTD. 3 QW-R208-032,A