2SC3149-T60-K

2SC3149-T60-K

  • 厂商:

    UTC(友顺)

  • 封装:

  • 描述:

    2SC3149-T60-K - NPN TEANSISTOR - Unisonic Technologies

  • 详情介绍
  • 数据手册
  • 价格&库存
2SC3149-T60-K 数据手册
UNISONIC TECHNOLOGIES CO., LTD 2SC3149 Preliminary NPN SILICON TRANSISTOR NPN TEANSISTOR DESCRIPTION The UTC 2SC3149 are series of NPN silicon planar transistor, and its suited to be used in power amplifier applications. FEATURES * Suit for power amplifier applications Lead-free: 2SC3149L Halogen-free: 2SC3149G ORDERING INFORMATION Normal 2SC3149-T60-K Ordering Number Lead Free 2SC3149L-T60-K Halogen Free 2SC3149G-T60-K Package TO-126 Pin Assignment 1 2 3 B C E Packing Bulk 2SC3149L-T60-K (1)Packing Type (2)Package Type (3)Lead Plating (1) K: Bulk (2) T60: TO-126 (3) G: Halogen Free, L: Lead Free, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2008 Unisonic Technologies Co., Ltd 1 of 2 QW-R204-024.a 2SC3149 Preliminary NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING PARAMETER Collector-Base Voltage Collector-emitter voltage Emitter-Base Voltage Collector Current SYMBOL VCBO VCEO VEBO IC RATINGS 1200 800 7 0.5 2 UNIT V V V A W ℃ ℃ Collector Dissipation PC Junction Temperature TJ +150 Storage Temperature TSTG -55 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS BVCBO Collector-Base Breakdown Voltage IC=1mA, IE=0A BVCEO Collector-Emitter Breakdown Voltage IC=5mA, IB=0A Emitter-Base Breakdown Voltage BVEBO IE=1mA, IC=0A ICBO Collector Cutoff Current VCB=800V, IE=0A Emitter Cutoff Current IEBO VEB=5V, IC=0A DC Current Gain (Note) hFE IC=100mA, VCE=5V Collector-Emitter Saturation Voltage VCE(SAT) IC=200mA, IB=40mA Base-Emitter Saturation Voltage VBE(SAT) IC=200mA, IB=40mA Current Gain Bandwidth Product fT IC=100mA, VCE=10V Output Capacitance Cob VCB=10V, f=1MHz Turn-On Time tON IC=1A, IB1=0.2A, IB2=-0.4A, Storage Time tSTG RL=400Ω, VCC=400V Fall Time tF Note: Pulse test: Pulse width=300μs, Duty Cycle≦2% MIN 1200 800 7 TYP MAX UNIT V V V μA 10 μA 10 40 0.8 1.5 15 30 1.0 3.0 0.7 V V MHz pF μs μs μs 10 CLASSIFICATION OF hFE RANK RANGE K 10 ~ 20 L 15 ~ 30 M 20 ~ 40 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 2 QW-R204-024.a
2SC3149-T60-K
PDF文档中的物料型号为2SC3149,这是NPN硅平面晶体管系列,适用于功率放大器应用。


器件简介如下: - UTC 2SC3149系列是NPN硅平面晶体管,适合用于功率放大器应用。


引脚分配如下: - TO-126封装: - 1号引脚:基极(B) - 2号引脚:集电极(C) - 3号引脚:发射极(E)

参数特性如下: - 绝对最大额定值: - 集-基电压:1200V - 集-射电压:800V - 发-基电压:7V - 集电极电流:0.5A - 集电极耗散功率:2W - 结温:+150℃ - 存储温度:-55℃至+150℃

电性特性(Ta=25℃): - 集-基击穿电压:1200V - 集-射击穿电压:800V - 发-基击穿电压:7V - 集电极截止电流:小于10μA - 发射极截止电流:小于10μA - DC电流增益(hFE):10至40 - 集-射饱和电压:0.8V - 基-发射饱和电压:1.5V - 电流增益-带宽积:15MHz - 输出电容:30pF - 导通时间:1.0μs - 存储时间:3.0μs - 关断时间:0.7μs

功能详解: - 2SC3149晶体管主要用于功率放大器应用,具有较高的电压和电流承受能力,适用于需要较高功率输出的场合。


应用信息: - 该晶体管适用于功率放大器应用,特别是在需要较高电压和电流的场合。


封装信息: - 标准封装为TO-126,有铅版本、无铅版本和无卤版本,分别标记为2SC3149-T60-K、2SC3149L-T60-K和2SC3149G-T60-K。

封装类型为K代表散装,T60代表TO-126封装,G、L分别代表无卤和无铅。
2SC3149-T60-K 价格&库存

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