2SC3320-T3P-T

UNISONIC TECHNOLOGIES CO., LTD 2SC3320 HIGH VOLTAGE HIGH SPEED SWITCHING FEATURES * High voltage, high speed switching * High reliability NPN SILICON TRANSISTOR 1 TO-3P *Pb-free plating product number:2SC3320L ORDERING INFORMATION Order Number Normal Lead Free Plating 2SC3320-T3P-T 2SC3320L-T3P-T 1 B Pin Assignment 2 3 C E Package TO-3P Packing Tube 2 SC3320L-T3P-T (1)Packing Type (2)Package Type (3)Lead Plating (1) T: Tube (2) T3P: TO-3P (3) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 5 QW-R214-008,B 2SC3320 ABSOLUTE MAXIMUM RATINGS (TC = 25℃) PARAMETER Collector Base Voltage NPN SILICON TRANSISTOR SYMBOL RATINGS UNIT VCBO 500 V VCEO 400 V Collector Emitter Voltage 400 V VCEO(SUS) Emitter Base Voltage VEBO 7 V Collector Current IC 15 A Base Current IB 5 A Power Dissipation PD 80 W ℃ Junction Temperature TJ +150 ℃ Storage Temperature TSTG -40 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Thermal Resistance Junction to Case SYMBOL θJC RATINGS 1.55 UNIT ℃/W ELECTRICAL SPECIFICATIONS (TC =25℃, Unless Otherwise Specified.) PARAMETER Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Switching Time SYMBOL VCBO VCEO VCEO(SUS) VEBO VCE (SAT) VBE (SAT) ICBO IEBO hFE tON tSTG tF TEST CONDITIONS ICBO=1mA ICEO=10mA IC=0.2A IEBO=1mA IC=6A, IB=1.2A VCBO=500V VEBO=7V IC=6A, VCE=5V IC=7.5A, IB1 =1.5A, IB2=-3A RL=20Ω, Pw=20µs, Duty ≤ 2% MIN 500 400 400 7 TYP MAX UNIT V V V V V V mA mA µs µs µs 1 1.5 1 1 10 0.5 1.5 0.15 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R214-008,B 2SC3320 SWITCHING TIME TEST CIRCUIT RL=20Ω NPN SILICON TRANSISTOR IB1 IB2 IB1 IB2 IC 0.9IC IC PW =20μs tON 0.1IC t STG tF UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R214-008,B 2SC3320 TYPICAL CHARACTERISTICS Collector Output Characteristics 5 NPN SILICON TRANSISTOR DC Current Gain 300 100 50 30 10 5 3 1 TC=150℃ 75℃ 25 ℃ -50℃ VCE=5V Collector Emitter Voltage, VCE (V) 3 IC=1A 2A 3A 5A 10A TC=25℃ 1 0.5 0.3 0.1 0.05 0.03 0.03 0.05 0.1 DC Current Gain, hFE 0.3 0.5 1 3 5 0.05 0.1 0.3 0.5 1 3 5 10 15 Base Current, I B ( A) Base and Collector Saturation Voltage 4 3 1 0.5 0.3 VCE(SAT) 0.1 0.05 0.03 0.01 0 .05 0.1 VBE(SAT) TC=25℃IC=5IB 30 10 Collector Current, I C (A) Collector Current, I C (A) Safe Operating Area 10 μ 0μ 10 s Saturation Voltage, VCE (SAT), VBE (SAT) (V) s 5 3 1 0.5 0.3 T C=25℃ 0.05 Single Pulse 0.03 1 35 10 0.1 PW =1ms DC 0.3 0.5 1 3 5 10 20 30 50 100 300 5001000 Collector Current, I C (A) Collector Emitter voltage, VCE (V) Switching Time 1.5 1 t STG Switching Time (µs) 0.5 0.3 t ON 0.1 TC=25℃ 0.05 VCC=150V IC=5I B1 =-2.5IB2 0.03 0.5 1 tF 3 5 10 25 Collector Current, I C (A) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R214-008,B 2SC3320 NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R214-008,B