UNISONIC TECHNOLOGIES CO., LTD
2SC3356
NPN SILICON TRANSISTOR
HIGH FREQUENCY LOW NOISE
AMPLIFIER
DESCRIPTION
1
The UTC 2SC3356 is designed for such applications as: DC/DC
converters, supply line switching, battery charger, LCD backlighting,
peripheral drivers, Driver in low supply voltage applications (e.g.
lamps and LEDs) and inductive load driver (e.g. relays, buzzers and
motors).
3
3
FEATURES
2
1
SOT-23-3
SOT-23
(JEDEC TO-236)
(EIAJ SC-59)
1
SOT-89
* Low Noise and High Gain
* High Power Gain
2
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
2SC3356L-x-AE2-R
2SC3356G-x-AE2-R
SOT-23-3
2SC3356L-x-AE3-R
2SC3356G-x-AE3-R
SOT-23
2SC3356L-x-AB3-R
2SC3356G-x-AB3-R
SOT-89
Note: Pin Assignment: B: Base E: Emitter
C: Collector
Pin Description
1
2
3
B
E
C
B
E
C
B
C
E
Packing
Tape Reel
Tape Reel
Tape Reel
2SC3356G-x-AE2-R
(1)Packing Type
(2)Package Type
(3)Rank
(4)Green Package
(1) R: Tape Reel
(2) AE2: SOT-23-3, AE3: SOT-23
(3) x: refer to Classification of hFE
(4) G: Halogen Free and Lead Free, L: Lead Free
MARKING
SOT-23-3/SOT-23
2SC3356L
2SC3356G
www.unisonic.com.tw
Copyright © 2018 Unisonic Technologies Co., Ltd
SOT-89
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2SC3356
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Power Dissipation
SYMBOL
BVCBO
BVCEO
BVEBO
IC
SOT-23-3
SOT-23
SOT-89
PD
RATINGS
20
12
3
100
UNIT
V
V
V
mA
200
mW
500
mW
Junction Temperature
TJ
+150
°С
Storage Temperature
TSTG
-65 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified)
PARAMETER
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector-Base Cut-Off Current
Emitter-Base Cut-Off Current
DC Current Gain
Gain Bandwidth Product
Feed-Back Capacitance
Noise Figure
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
fT
CRE
NF
TEST CONDITIONS
IC=10μA, IE=0
IC=1mA, RBE=∞
IE=10μA, IC=0
VCB =10V,IE =0
VEB =1 V, IC=0
VCE =10 V, IC =20 mA
VCE =10 V, IC =20 mA
VCB =10 V, IE =0, f =1.0MHz
VCE =10 V, IC =7mA, f =1.0GHz
MIN
20
12
3
TYP
MAX
1.0
1.0
300
50
7
1.0
2.0
UNIT
V
V
V
μA
μA
GHz
pF
dB
CLASSIFICATION OF hFE
RANK
RANGE
A
50-170
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
B
160-300
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TYPICAL CHARACTERISTICS
Feed-back Capacitance, CRE (pF)
Total Power Dissipation, PT (mW)
NPN SILICON TRANSISTOR
200
DC Current Gain vs. Collector Current
Insertion Gain vs. Collector Current
15
VCE=10V
100
10
50
5
20
1
10
5
Collector Current, IC (mA)
0
0.5
50
1
10
5
Collector Current, IC (mA)
50 70
Maximum Gain, GMAX (dB)
Insertion Gain,|S21θ|2(dB)
Gain Bandwidth Product, fT (GHz)
10
0.5
VCE=10V
f=1.0GHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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2SC3356
TYPICAL CHARACTERISTICS (Cont.)
7
Noise Figure vs. Collector Current
Noise Figue, NF (dB)
5
4
3
2
f=1.0GHz
IC=20mA
4
|S21θ|2
3
2
NF
1
1
0
0.5
Noise Figure, Forward Insertion Gain
vs. Collector to Emitter Voltage
5
VCE=10V
f=1.0GHz
6
Noise Figure, NF (dB)
NPN SILICON TRANSISTOR
0
1
5
10
Collector Current, IC (mA)
50 70
0
2
4
6
8
10
Collector to Emitter Voltage, VCE (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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