2SC3647L-X-AB3-R

UNISONIC TECHNOLOGIES CO.,LTD 2SC3647 HIGH-VOLTAGE SWITCHING APPLICATIONS FEATURES * High breakdown voltage and large current capacity * Fast switching time * Very small size marking it easy to provide high – density, small-sized hybrid ICs NPN SILICON TRANSISTOR 1 SOT-89 Lead-free: 2SC3647L Halogen-free: 2SC3647G ORDERING INFORMATION Ordering Number Lead Free Plating Halogen Free 2SC3647L-x-AB3-R 2SC3647G-x-AB3-R Package SOT-89 Pin Assignment 1 2 3 B C E Packing Tape Reel www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd 1 of 5 QW-R208-039,C 2SC3647 ABSOLUATE MAXIUM RATINGS (Ta = 25°C) NPN SILICON TRANSISTOR PARAMETER SYMBOL RATINGS UNIT Collector to Base Voltage VCBO 120 V Collector to Emitter Voltage VCEO 100 V Emitter to Base Voltage VEBO 6 V Collector Current IC 2 A Collector Current (Pulse) ICP 3 A Collector Dissipation PC 500 mW Junction Temperature TJ 150 °C Storage Temperature TSTG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta= 25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance DC Current Gain Turn-ON Time Storage Time Fall Time Gain-Bandwidth Product ■ SYMBOL BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT) VBE(SAT) Cob hFE tON tSTG tF fT TEST CONDITIONS IC = 10μA, IE =0 IC = 1mA, RBE =∞ IE = 10μA, IC=0 VCB = 100V, IE =0 VEB = 4V, IC =0 IC = 1A, IB = 100mA IC = 1A, IB = 100mA VCB = 10V, f =1MHz VCE = 5V, IC = 100mA See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VCE = 10V, IC = 100mA MIN TYP MAX UNIT 120 V 100 V 6 V 100 nA 100 nA 0.13 0.4 V 0.85 1.2 V 16 pF 100 400 80 ns 1000 ns 50 ns 120 MHz CLASSIFICATION OF hFE RANK RANGE R 100 ~ 200 S 140 ~ 280 T 200 ~ 400 UNISONIC TECHNOLOGIES CO., LTD 5 www.unisonic.com.tw 2 of 5 QW-R208-039,C 2SC3647 SWITCHING TIME TEST CIRCUIT NPN SILICON TRANSISTOR PW=20µS DC≤1% INPUT 50Ω IB1 RB IB2 RL VR + 100µF -5V 10IB1= -10IB2=IC=0.7A + 470µF 50V UNISONIC TECHNOLOGIES CO., LTD 5 www.unisonic.com.tw 3 of 5 QW-R208-039,C 2SC3647 ■ NPN SILICON TRANSISTOR TYPICAL CHARACTERICS 2.4 2.0 1.6 1.2 0.8 0.4 0 IC - VBE VCE = 5V 1000 7 5 3 2 100 7 5 hFE - IC VCE = 5V 0 0.2 0.8 0.4 0.6 1.0 Base to Emitter Voltage, VBE (V) 1.2 3 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC (A) 23 UNISONIC TECHNOLOGIES CO., LTD 5 www.unisonic.com.tw Collector to Emitter Saturation Voltage, VCE (sat) (mV) Output Capacitance, cob (pF) 4 of 5 QW-R208-039,C 2SC3647 ■ NPN SILICON TRANSISTOR TYPICAL CHARACTERICS(Cont.) 10 7 5 3 2 1.0 7 5 3 7 0.01 VBE (sat) - IC IC/IB = 10 5I CP 3I C 2 1.0 7 5 3 2 ASO 1m 10 s m s s 10 0m DC Ta = -25°C 25°C 75°C 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC (A) 23 0.1 7 5 3 2 One Pulse - Ta = 25°C 0.01 Mounted on ceramic board 7 (250mm × 0.8mm) 5 2 3 5 7 100 5 7 1.0 2 3 5 7 10 Collector to Emitter Voltage, VCE (V) Op er at ion 2 1.8 Collector Dissipation, Pc (W) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 PC - Ta Infin ite h eat s ink 60 80 100 120 140 160 Ambient Temperature, Ta (°C) UNISONIC TECHNOLOGIES CO., LTD 5 www.unisonic.com.tw 5 of 5 QW-R208-039,C