2SC3669

UTC 2SC3669 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES *Low saturation voltage VCE(sat)= 0.5V(Max) *High speed switching time: tstg=1.0μS(Typ.) 1 TO-251 1:BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS ( Ta=25°C) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Ic IB Pc Tj Tstg LIMITS 80 80 5 2 1 1 150 -55 ~ +150 UNIT V V V A A W °C °C ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER Collector Emitter Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base- Emitter Saturation Voltage Transition Frequency Collector Output Capacitance SYMBOL V(BR)CEO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob TEST CONDITIONS Ic= 10mA, IB= 0 VCB=80V, IE= 0 VEB= 5V, Ic=0 VCE=2V, Ic=0.5A VCE=2V, Ic=1.5A Ic=1A, IB=0.05A Ic=1A, IB=0.05A VCE=2V, Ic=0.5A VCB= 10V, IE= 0, f=1MHz MIN 80 TYP MAX 1.0 1.0 240 UNIT V μA μA 70 40 0.15 0.9 100 30 0.5 1.2 V V MHz pF UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R213-006,B UTC 2SC3669 PARAMETER Turn-on Time Storage Time Switching Time Fall Time NPN EPITAXIAL SILICON TRANSISTOR SYMBOL ton tstg IB1 IB2 TEST CONDITIONS 20μs INPUT IB2 IB1 OUTPUT 30Ω MIN TYP 0.2 1.0 MAX UNIT μs Vcc=30 V tf IB1= -IB2=0.05A DUTY CYCLE≦1% 0.2 CLASSIFICATION OF hFE1 RANK RANGE O 70-140 Y 120-240 ELECTRICAL CHARACTERISTICS CURVES Ic-VCE 25 35 20 15 10 Collector -Emitter Voltage, Vc E (V) 2.0 Collector Current, Ic (A) 1.6 1.2 0.8 0.4 0 0 2 4 6 1 0.8 IB=5mA 0.6 0.4 0.2 0 0 0.4 0.8 1.2 1.6 2.0 2.4 10 15 20 30 VCE-Ic Common Emitter Ta=25℃ IB=5mA Common Emitter Ta=25℃ 8 10 12 Collector -Emitter Voltage, VcE (V) 40 50 Collector Current, Ic (A) VCE -Ic Collector -Emitter Voltage, Vc E (V) Collector -Emitter Voltage, Vc E (V) 1 0.8 0.6 0.4 0.2 0 0 0.4 0.8 1.2 1.6 IB=5mA 10 15 20 30 40 50 Common Emitter Ta=100℃ 2.0 2.4 1 IB=5mA 0.8 0.6 0.4 0.2 0 0 0.4 0.8 1.2 1.6 10 15 20 30 40 50 70 Common Emitter Ta=-55℃ 2.0 2.4 VCE-Ic Collector Current, Ic (A) Collector Current, Ic (A) UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R213-006,B UTC 2SC3669 500 DC Current Gain hFE 300 NPN EPITAXIAL SILICON TRANSISTOR hFE -Ic Collector Emitter Saturation Voltage, VCE(sat) VCE(sat) -Ic 0.5 0.3 Common Emitter Ic/IB=20 Ta=100℃ 0.1 0.05 0.03 0.01 0.01 Ta=25℃ Ta=-55℃ Common Emitter VCE=2V Ta=100℃ Ta=25℃ Ta=-55℃ 100 50 30 10 0.01 0.03 0.1 0.3 1 2 0.03 0.05 0.1 0.3 0.5 1 Collector Current Ic (A) Collector Current Ic (A) VBE(sat) -Ic Base Emitter Saturation Voltage, VBE(sat) 3 Collector Current, Ic (A) Common Emitter Ic/IB=20 Ta=-55℃ 1 0.5 0.3 Ta=25℃ Ta=100℃ 2.0 1.6 1.2 0.8 0.4 0 0 0.2 0.4 Common Emitter VCE=2 V Ta=100℃ Ta=25℃ Ic-VBE Ta=-55℃ 0.1 0.01 0.03 0.05 0.1 0.3 0.5 1 2 0.6 0.8 1.0 1.2 1.6 Collector Current, Ic (A) Base -Emitter Voltage, VBE(V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R213-006,B