2SC3834

UNISONIC TECHNOLOGIES CO., LTD 2SC3834 SWITCH NPN TRANSISTOR DESCRIPTION The UTC 2SC3834 is an epitaxial planar type NPN silicon transistor.. NPN SILICON TRANSISTOR FEATURES * Humidifier, DC-DC converter, and general purpose Lead-free: 2SC3834L Halogen-free: 2SC3834G ORDERING INFORMATION Normal 2SC3834-TA3-T Ordering Number Lead Free Plating 2SC3834L-TA3-T Halogen Free 2SC3834G-TA3-T Package TO-220 Pin Assignment 1 2 3 B C E Packing Tube www.unisonic.com.tw 1 of 4 QW-R203-026.C Copyright © 2009 Unisonic Technologies Co., Ltd 2SC3834 ABSOLUTE MAXIMUM RATING (Ta=25°C) PARAMETER Collector-Base Voltage Collector-emitter voltage Emitter-Base Voltage Collector Current (Pulse) SYMBOL VCBO VCEO VEBO IC NPN SILICON TRANSISTOR RATINGS 200 120 8 7 Base Current IB 3 50 Collector Dissipation (TC=25°C) PC Junction Temperature TJ +150 Storage Temperature TSTG -55 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. UNIT V V V A A W °C °C ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER Collector-Emitter Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain (Note) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance SYMBOL BVCEO ICBO IEBO hFE VCE(SAT) VBE(SAT) fT Cob TEST CONDITIONS IC= 50mA VCB=200V, IE=0A VEB=8V, IC=0A VCE=4V, IC=3A IC=3A, IB=0.3mA IC=3A, IB=0.3mA IE=-0.5mA, VCE=12V, f=100MHz VCB=10 V, IE=0A, f=1MHz MIN 120 TYP MAX UNIT V μA 100 μA 100 220 0.5 1.2 30 110 V V MHz pF 70 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R203-026.C 2SC3834 TYPICAL CHARACTERISTICS IC-VCE Characteristics (Typical) 200mA 150mA 100mA 60mA 40mA 20mA IE=10mA Collector-Emitter Saturation,VCE(SAT) (V) 7 6 Collector Current,IC (A) 5 4 3 2 1 0 0 1 2 3 Collector-Emitter Voltage,VCE (V) 4 NPN SILICON TRANSISTOR VCE(SAT)-IB Characteristics (Typical) 2 1 IC=1A 3A 5A 0 0.005 0.01 0.05 0.1 Base Current,IB (A) 0.5 1 30 fT-IE Characteristics (Typical) VCE=12V 20 10 5 Safe Operating Area (Single Pulse) 100ms 10ms 20 1 10 0.5 Without Healstink Natural Cooling 0.1 0 -0.01 0.05 -0.05 -0.1 -0.5 -1 Emitter Current,IE (A) -5 5 10 50 120 Collect-Emitter Voltage,VCE (V) 200 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R203-026.C 2SC3834 TYPICAL CHARACTERISTICS(Cont.) NPN SILICON TRANSISTOR 50 Maximum Power Dissipation,PC (W) PC-TA Derating 40 ith W In fin 30 20 ite H ea ts in k 10 2 0 Without Heatsink 0 25 100 125 50 75 Ambient Temperature,TA (℃) 150 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R203-026.C