2SC4027L-X-TN3-R

UNISONIC TECHNOLOGIES CO., LTD 2SC4027 HIGH-VOLTAGE SWITCHING APPLICATIONS FEATURES * High voltage and large current capacity. * Fast switching time. 1 NPN SILICON TRANSISTOR TO-252 Lead-free: 2SC4027L Halogen-free:2SC4027G ORDERING INFORMATION Normal 2SC4027-x-TN3-R Ordering Number Lead Free Halogen Free 2SC4027L-x-TN3-R 2SC4027G-x-TN3-R Package TO-252 Pin Assignment 1 2 3 B C E Packing Tape Reel www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd 1 of 5 QW-R209-018.B 2SC4027 ABSOLUTE MAXIMUM RATING (Ta=25°C) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) SYMBOL VCBO VCEO VEBO IC ICP NPN SILICON TRANSISTOR RATINGS UNIT 180 V 160 V 6 V 1.5 A 2.5 A Ta=25°C 1 W Collector Dissipation Pc TC=25°C 15 W Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Turn-On Time Storage Time Fall Time SYMBOL BVCBO BVCEO BVEBO VCE(SAT) VBE(SAT) ICBO IEBO hFE1 hFE2 fT Cob TON TSTG tF TEST CONDITIONS IC=10A, IE=0 IC =1mA, RBE=∞ IE=10μA, IC =0 IC =500mA, IB=50mA IC =500mA, IB=50mA VCB=120V, IE=0 VEB=4V, I IC =0 VCE=5V, IC =100mA VCE=5V, IC =10mA VCE=10V, IC =50mA VCB=-10V, f=1MHz See specified Test Circuit MIN 180 160 6 TYP MAX UNIT V V V 0.13 0.45 V 0.85 1.2 V 1.0 μA 1.0 μA 400 120 12 60 1.2 80 MHz pF μs μs μs 100 80 CLASSIFICATION OF hFE1 RANK RANGE R 100~200 S 140~280 T 200~400 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R209-018.B 2SC4027 SWITCHING TIME TEST CIRCUIT INPUT PW=20µs D.C.≤1% 50Ω IB1 RB IB2 NPN SILICON TRANSISTOR OUTPUT RL 14kΩ + 470µF VR + 100µF -5V 100V 10IB1= -10IB2=Ic=0.7A UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R209-018.B 2SC4027 TYPICAL CHARACTERISTICS Collector Current vs. Collector to Emitter Voltage 40mA 50mA mA 30 20mA 10mA 5mA NPN SILICON TRANSISTOR 1.8 1.6 Collector Current, Ic (A) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 1.0 Collector Current, Ic (A) 0.8 0.6 0.4 0.2 0 0m Collector Current vs. Collector to Emitter Voltage 4.5mA 4.0mA 3.5mA 5. A 3.0mA 2.5mA 2.0mA 1.5mA 1.0mA 0.5mA IB=0 0 20 10 30 40 50 Collector to Emitter Voltage, VCE (V) DC Current vs. Collector Current 2mA 1mA IB=0 1 2 3 4 5 Collector to Emitter Voltage, VCE (V) Collector Current vs. Base to Emitter Voltage VCE=5V 1.6 1000 VCE=5V Ta=75°C Collector Current, Ic (A) DC Current Gain, hFE 1.2 0.8 Ta=75°C Ta=25°C Ta=-25°C 100 25°C -25°C 0.4 0 0 0.2 0.4 0.6 0.8 1.2 1.0 Base to Emitter Voltage, VBE (V) Gain Bandwidth Product vs. Collector Current VCE=10V Output Capacitance, Cob (pF) 10 0.01 0.1 1.0 Collector Current, Ic (A) Output Capacitance vs. Collector to Base Voltage f=1MHz 100 Gain Bandwidth Product, fT (MHz) 100 10 10 0.01 0.1 1.0 Collector Current, Ic (A) 1.0 10 100 Collector to Base Voltage, VCB (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R209-018.B 2SC4027 TYPICAL CHARACTERISTICS(Cont.) Collector to Emitter Saturation Voltage vs. Collector Current Collector to Emitter Saturation Voltage, VCE(SAT) (V) Ic/IB=10 Collector to Emitter Saturation Voltage, VCE(SAT) (V) 1000 NPN SILICON TRANSISTOR 10 Collector to Emitter Saturation Voltage vs. Collector Current Ic/IB=10 100 Ta=75°C Ta=25°C Ta=-25°C 1.0 Ta=-25°C 25°C 75°C 0.01 0.1 1.0 Collector Current, Ic (A) Collector Dissipation vs. Ambient Temperature 0.01 0.1 1.0 Collector Current, Ic (A) Collector Current, Ic (A) 1.0 DC Collector Dissipation, Pc (W) Collector Current vs. Collector to Emitter Voltage ICP=2.5A 1m s IC=1.5A s 0m 10 ms 10 16 14 12 10 8 6 4 2 0 0 0.1 op er ati on C D op (T a= 25 °C ) er at io n a (T =2 5° ) C No heat sink 0.01 One pulse Tc =25°C 1.0 10 100 Collector to Emitter Voltage, VCE(V) 20 40 60 80 100 120 140 160 Ambient Temperature, Ta(°C) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R209-018.B