UTC 2SC4548 NPN EPITAXIAL PLANAR SILICON TRANSISTOR
HIGH VOLTAGE DRIVER APPLICATION
FEATURES
*High breakdown voltage. *Excellent hFE linearity.
1
SOT-89
1:EMITTER
2:COLLECTOR
3:BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C )
PARAMETER
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (PULSE) Collector Power Dissipation Junction Temperature Storage Temperature
SYMBOL
VCBO VCEO VEBO Ic Icp Pc Tj Tstg
RATING
400 400 5 200 400 1.3 150 -55 ~ +150
UNIT
V V V mA mA W °C °C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collect-Base Breakdown Voltage Collect-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Transfer Ratio Collect-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Reverse Transfer Capacitance Gain-Bandwidth Product Turn-on Time Turn-off Time
SYMBOL
BVCBO BVCEO BVEBO ICBO IEBO
TEST CONDITIONS
IC= 10µA,IE=0 IC= 1mA,IB=0,RBE=∞ IE= 10µA,IC=0 VCB= 300V,IE=0 VEB=4V,IC=0 VCE=10V, Ic=50mA IC=50mA,IB=5mA IC=50mA,IB=5mA VCB=30V, f=1MHz VCB=30V,f=1MHz VCE=30V,IC=10mA See test circuit See test circuit
MIN
400 400 5
TYP
MAX
UNIT
V V V µA µA V V pF pF MHz µs µs
hFE
VCE(sat) VBE(sat) Cob Cre fT ton toff
60 0.6
0.1 0.1 200 1.0 4 3 70 0.25 5.0
UTC
UNISONIC TECHNOLOGIES
CO. LTD
1
QW-R208-027,A
UTC 2SC4548 NPN EPITAXIAL PLANAR SILICON TRANSISTOR
CLASSIFICATION OF hFE
RANK RANGE D 60-120 E 100-200
TEST CIRCUIT (Unit : resistance : Ω, capacitance : F)
IB1 INPUT RB IB2 VR
PW=20 μs Duty Cycle≦1%
OUTPUT
RL + 470μ VCC=150V
50
+ 100μ VBE= -1V
10IB1= -10IB2=Ic=50mA RL=3kΩ,RB=200Ω at Ic= 50mA
ELECTRICAL CHARACTERISTICS CURVES
120 100 Collector Current,Ic-mA 80 60 40 20 0 0 TA=70℃
IC-VBE VCE=10V I(tot) mA 5 3 2 DC Current Gain,hFE 100 7 5 3 2 10 1.4
hFE-Ic TA=70℃ TA=25℃ TA= -30℃ VCE=10V
TA=25℃
TA= -30℃ 0.2 0.6 0.8 1.0 1.2 0.4 Base to Emitter Voltage,VBE-V
7 5 7 1.0 2 3 5 7 10 2 3 5 7100 2 3 Collector Current,Ic- mA
UTC
UNISONIC TECHNOLOGIES
CO. LTD
2
QW-R208-027,A
UTC 2SC4548 NPN EPITAXIAL PLANAR SILICON TRANSISTOR
10 7 5 3 2 1.0 7 5 3 2 Switch Time -Ic tstg
Collector Current,Ic- mA
tf
ton 0.1 VCC=-150V 7 10IB1=-10IB2=IC 5 3 5 7 10 2 3 5 7 100 2 3 Collector Current,Ic- mA 1.6 Pc -Ta
5
ASO 7 Icp 5 1ms 3 Ic 2 10ms 100 7 5 3 100ms 2 DC Operation 1.0 7 5 3 Ta=25℃*Single pulse 2 Mounted on ceramic board 1.0 (250mm2*0.8mm) 7 5 3 5 7 10 2 3 5 7 100 2 3 5 CE Collector to Emitter Voltage,V -V 5 VCE(sat)-Ic Ic/IB =10
Switching Time,SW Time-μs
Collector Dissipation,Pc -W
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 Mounted on ceramic board (250mm2*0.8mm) 20 40 60 80 100 120 140 160 Ambient Temperature,Ta -℃
Collector to Emitter Saturation Voltage,VCE(sat)-V
3 2 1.0 7 5 3 2 0.1 7 5 7 1.0 TA=70℃
TA=25℃, -30℃ 2 3 5 7 10 2 3 5 7100 2 Collector Current,Ic- mA
V BE (sat)-Ic 7 5 Base to Emitter Saturation Voltage,V BE (sat)-V 3 2 1.0 7 5 3 2 T A =70 ℃ 7 1.0 3 T A =25 ℃ T A = -30 ℃ Ic/IB =10
5 7 100 2 3 5 7 10 2 3 Collector Current,Ic- mA
UTC
UNISONIC TECHNOLOGIES
CO. LTD
3
QW-R208-027,A
UTC 2SC4548 NPN EPITAXIAL PLANAR SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES
CO. LTD
4
QW-R208-027,A
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