UNISONIC TECHNOLOGIES CO.,
2SC4617
GENERAL PURPOSE TRANSISTOR
FEATURES
* Low Cob Cob=2.0pF (typ) * Complements the UTC 2SA1774
NPN EPITAXIAL SILICON TRANSISTOR
2 1
MARKING
3
C5
SOT-23
*Pb-free plating product number: 2SC4617L
PIN CONFIGURATION
PIN NO. PIN NAME 1 Emitter 2 Base 3 Collector
ORDERING INFORMATION Order Number Normal Lead free 2SC4617-AE3-R 2SC4617L-AE3-R Package SOT-23 Packing Tape Reel
www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co.,
1
QW-R206-081,A
2SC4617
PARAMETER Collector -Base Voltage Collector -Emitter Voltage Emitter -Base Voltage DC Collector Current Power Dissipation Operating Temperature Storage Temperature
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS (Ta = 25℃)
SYMBOL VCBO VCEO VEBO IC PD TJ TSTG RATINGS 60 50 7 150 150 +150 -40 ~ +150 UNIT V V V mA mW ℃ ℃
ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)
PARAMETER Collector Base Breakdown Voltage Collector Emitter Breakdown Voltage Emitter-base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Transfer Ratio Collector-Emitter Saturation Voltage Transition Frequency Output Capacitance SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob TEST CONDITIONS IC= 50μA IC= 1mA IE=50μA VCB=60V VEB= 7V VCE=6V,Ic=1mA IC=50mA, IB=5mA VCE=12V, IE= -2mA, f=100MHz VCE= 12V, IE= 0A, f=1MHz MIN 60 50 7 TYP MAX UNIT V V V μA μA V MHz pF
120 180 2
0.1 0.1 560 0.4 3.5
CLASSIFICATION OF hFE
RANK RANGE Q 120 ~ 270 R 180 ~ 390 S 270 ~ 560
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-081,A
2SC4617
■ TYPICAL CHARACTERICS
NPN EPITAXIAL SILICON TRANSISTOR
Grounded emitter propagation characteristics
COLLECTOR CURRENT, IC (mA)
50 20 10 5 2 1 0.5 0.2 0.1 Ta=100℃ 25℃ VCE = 6V
Grounded emitter output characteristics (Ι)
COLLECTOR CURRENT, IC (mA)
100 Ta = 25℃ 80 60
0.20mA 0.50mA
A 0 .45 m A 0 .40 m 0.35mA
0.30mA 0.25mA
40 20 0 0 0.4 0.8 1.2
0.15mA 0.10mA 0.05mA I B = 0A
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 BASE TO EMITTER VOLTAGE, VBE (V)
1.6
2.0
COLLECTOR TO EMITTER VOLTAGE, VCE (V)
Grounded emitter output characteristics (¢º)
10 Ta = 25℃
30μA 27 μA 24 μA 21 μA 18 μA 15 μA
DC current gain vs. collector current (Ι)
500 Ta = 25℃ V CC = 5V 3V 1V
COLLECTOR CURRENT, IC (mA)
8 6 4
DC CURRENT GAIN, hFE
16 20
200 100 50
12 μA 9μ A 6μA 3μA
20 10 0.2 0.5 1
2 0 0 4 8
IB = 0A
12
2
5 10 20
60 100 200
COLLECTOR TO EMITTER VOLTAGE, VCE (V)
COLLECTOR CURRENT, IC (mA)
DC current gain vs. collector current (Ⅱ)
500 Ta = 100℃ 25℃ V CC = 5V 0.5
Collector-emitter saturation voltage vs. collector current
Ta = 25℃
COLLECTOR SATURATION VOLTAGE, VCE(sat) (V)
DC CURRENT GAIN, hFE
200 100 50
0.2 0.1 0.05 0.02 0.01 0.2 0.5 1 IC/IB = 5V 20 10
20 10 0.2 0.5 1
2
5 10 20
60 100 200
2
5 10
20
50 100 200
COLLECTOR CURRENT, IC (mA)
COLLECTOR CURRENT, IC (mA)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R206-081,A
2SC4617
TYPICAL CHARACTERICS(cont.)
Collector-emitter saturation voltage vs. collector current (Ι)
0.5
NPN EPITAXIAL SILICON TRANSISTOR
Collector-emitter saturation voltage vs. collector current (Ⅱ)
0.5 IC/IB = 50 Ta = 100℃ 25℃
COLLECTOR SATURATION VOLTAGE, VCE(sat) (V)
0.2 0.1 0.05 0.02 0.01 0.2 0.5 1 5 10 20 50 100 200 2 COLLECTOR CURRENT, I C (mA) Ta = 100℃ 25℃
COLLECTOR SATURATION VOLTAGE, VCE(sat) ( V)
IC/IB = 10
0.2 0.1 0.05
0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR CURRENT, I C (mA)
Collector output capacitance vs collector-base voltage . Emitter input capacitance vs. emitter-base voltage
COLLECTOR OUTPUT CAPACITANCE, Cob (pF) EMITTER INPUT CAPACITANCE, Cib (pF)
Gain bandwidth product vs emitter current .
TRANSITION FREQUENCY, fT (MHz)
Ta = 25℃ 500 VCE =6V
20 10 Cib
Ta=25℃ f=1MHz IE=0A IC=0A
200
5
100
2
Cob
50 -0.5 -1
1 1 2 0.2 0.5 5 10 20 50 COLLECTOR TO BASE VOLTAGE , VCB ( V) EMITTER TO BASE VOLTAGE , VEB (V)
-2
-5
-10 -20
-50 -100
COLLECTOR CURRENT IE (mA) ,
BASE COLLECTOR TIME CONSTANT, Cc'rbb' (ps)
Base-collector time constant vs. emitter current
200 100 50
Ta=25℃ f=32MHZ VCB=6V
20 10 -0.2 -0.5 -1 -2 -5 -10 EMITTER CURRENT, IE (mA)
U TC assum es no responsibility for equipm ent failures that result from using products at v alues that ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or other param eters) listed in products specifications of any and all UT C products described or contained herein. UT C products are not designed for use in life support appliances, dev ices or system s where m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate and reliable and m ay be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-081,A
