UNISONIC TECHNOLOGIES CO., LTD
2SC4617
NPN SILICON TRANSISTOR
GENERAL PURPOSE
TRANSISTOR
FEATURES
* Low Cob
Cob=2.0pF (typ)
* Complements the UTC 2SA1774
ORDERING INFORMATION
Note:
Ordering Number
Halogen Free
2SC4617G-x-AB3-R
2SC4617G-x-AE3-R
2SC4617G-x-AL3-R
2SC4617G-x-AN3-R
2SC4617G-x-AQ3-R
Pin assignment: E: Emitter
B: Base
Package
SOT-89
SOT-23
SOT-323
SOT-523
SOT-723
C: Collector
Pin Assignment
1
2
3
B
C
E
E
B
C
E
B
C
E
B
C
E
B
C
Packing
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
MARKING
SOT-89
SOT-23 / SOT-323 / SOT-523 / SOT-723
C5G
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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2SC4617
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
7
V
Collector Current
IC
0.15
A
SOT-89
500
mW
SOT-523
150
mW
Collector Power Dissipation
PC
SOT-23/SOT-323
200
mW
SOT-723
125
mW
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta= 25°C, unless otherwise specified)
PARAMETER
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter-base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Output Capacitance
SYMBOL
TEST CONDITIONS
BVCBO
IC= 50μA
BVCEO
IC= 1mA
BVEBO
IE=50μA
ICBO
VCB=60V
IEBO
VEB= 7V
hFE
VCE=6V, IC=1mA
VCE(SAT)
IC=50mA, IB=5mA
fT
VCE=12V, IE= -2mA, f=100MHz
Cob
VCE= 12V, IE= 0A, f=1MHz
MIN
60
50
7
TYP
MAX
0.1
0.1
560
0.4
120
180
2
3.5
UNIT
V
V
V
μA
μA
V
MHz
pF
CLASSIFICATION OF hFE
RANK
RANGE
Q
120 ~ 270
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
R
180 ~ 390
S
270 ~ 560
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NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Grounded Emitter Propagation
Characteristics
20
10
5
25°C
2
1
TA=100°C
-55°C
0.5
0.2
0.1
100
VCE = 6V
TA=25°C
Collector Current, IC (mA)
Collector Current, IC(mA)
50
Grounded Emitter Output Characteristics (I)
80
0.40mA
60
0.15mA
0.10mA
0.05mA
20
IB = 0A
0
0
Base to Emitter Voltage, VBE (V)
0.35mA
0.30mA
0.25mA
0.20mA
40
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0.4
0.8
1.2
1.6
2.0
Collector to Emitter Voltage, VCE (V)
DC Current Gain, hFE
Collector Saturation Voltage,
VCE(SAT) (V)
DC Current Gain, hFE
Collector Current, IC (mA)
0.50mA
0.45mA
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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Base Collector Time Constant (ps)
Collector Saturation Voltage,
VCE(SAT) (V)
Collector saturation voltage, VCE(sat) (V)
Collector Output Capacitance, Cob (pF)
Emitter Input Capacitance, Cib (pF)
Transition Frequency, fT (MHz)
2SC4617
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
QW-R206-081.G
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2SC4617
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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