2SC4672G-A-AB3-R

UNISONIC TECHNOLOGIES CO., LTD 2SC4672 NPN SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR  DESCRIPTION The UTC 2SC4672 is a low frequency transistor. Excellent DC current gain characteristics.  FEATURES 1 *Low Saturation Voltage, Typically VCE(SAT)=0.1V at IC / IB=1A / 50mA *Excellent DC Current Gain Characteristics  ORDERING INFORMATION Order Number Lead Free Halogen Free 2SC4672L-x-AB3-R 2SC4672G-x-AB3-R Note: Pin Assignment: B: Base C: Collector E: Emitter  SOT-89 Package SOT-89 Pin Assignment 1 2 3 B C E Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2022 Unisonic Technologies Co., Ltd 1 of 2 QW-R208-004.M 2SC4672  NPN SILICON TRANSISTOR ABSOLUATE MAXIUM RATINGS (TA= 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 50 V Emitter to Base Voltage VEBO 6 V Collector Current IC 3 A Collector Current (Pulse) (Note 2) ICP 6 A Collector Dissipation PC 0.9 (Note 3) W Junction Temperature TJ +150 °C Operating Temperature TOPR -40 ~ +150 °C Storage Temperature TSTG -40 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Single pulse, PW=10ms. 3. Device mounted on FR-4 PCB with minimum recommended pad layout. (25×20×0.7mm)  THERMAL DATA PARAMETER Junction to Ambient Junction to Case  SYMBOL θJA θJC UNIT °С/W °С/W ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage BVCBO IC =50A Collector-Emitter Breakdown Voltage BVCEO IC =1mA Emitter-Base Breakdown Voltage BVEBO IE =50A Collector Cutoff Current ICBO VCB=60V Emitter Cutoff Current IEBO VEB=5V Base Emitter On Voltage VBE (ON) VCE =2V, IC =1A Base-Emitter Saturation Voltage VBE (SAT) IC=1A, IB=50mA Collector-Emitter Saturation Voltage VCE(SAT) IC /IB=1A/50mA (Note) DC Current Transfer Ratio hFE VCE=2V, IC =0.5A (Note) Transition Frequency fT VCE=2V, IE =-0.5A, f=100MHz Output Capacitance COB VCB=10V, IE =0A, f=1MHz Note : Measured using pulse current. ■ RATINGS 250 40 MIN 60 50 6 0.5 0.6 TYP 0.77 0.85 0.1 120 210 25 MAX 0.1 0.1 1.0 1.1 0.35 400 UNIT V V V A A V V V MHz pF CLASSIFICATION OF hFE RANK RANGE A 120 ~ 240 B 200 ~ 400 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R208-004.M www.unisonic.com.tw S 1m UNISONIC TECHNOLOGIES CO., LTD mS 10 Collector Current, IC (A) DC Current Gain, hFE Saturation Voltage, VCE(SAT) (mV) Base - Emitter Voltage, VBE(SAT) (V) Collector Current, IC (A)  Power Dissipation, PD(W) 2SC4672 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS QW-R208-004.M 3 of 4 2SC4672  NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein . UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R208-004.M