2SC4793-TF3-T

UNISONIC TECHNOLOGIES CO., LTD 2SC4793 NPN SILICON TRANSISTOR FEATURES *High transition frequency *Power amplifier applications *Driver stage amplifier applications 1 NPN SILICON TRANSISTOR TO-220F *Pb-free plating product number:2SC4793L ORDERING INFORMATION Order Number Normal Lead Free Plating 2SC4793-TF3-T 2SC4793L-TF3-T Package TO-220F Pin Assignment 1 2 3 B C E Packing Tube 2C4793L-TF3-T (1)Packing Type (2)Package Type (3)Lead Plating (1) T: Tube (2) TF3: TO-220F (3) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R219-009,A 2SC4793 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current SYMBOL VCBO VCEO VEBO IC IB NPN SILICON TRANSISTOR RATINGS UNIT 230 V 230 V 5 V 1 A 0.1 A Ta=25℃ 2.0 W Collector Power Dissipation PC TC=25℃ 20 W Junction Temperature TJ +150 ℃ Storage Temperature Range TSTG -55 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25°C, unless others specified) PARAMETER Collector-Emitter Breakdown Voltage Base -Emitter Voltage Collector-Emitter Saturation Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Transition Frequency Collector Output Capacitance SYMBOL BVCEO VBE VCE(SAT) ICBO IEBO hFE fT Cob TEST CONDITIONS IC=10mA, IB=0 VCE=5V, IC=500mA IC=500mA, IB=50mA VCB =230V, IE=0 VEB=5V, IC=0 VCE=5V, IC=100mA VCE=10V, IC=100mA VCB=10V, IE=0, f=1MHz MIN 230 TYP MAX 1.0 1.5 1.0 1.0 320 100 20 UNIT V V V µA µA MHz pF 100 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R219-009,A 2SC4793 TYPICAL CHARACTERISTICS NPN SILICON TRANSISTOR Transition Frequency vs. Collector Current 1000 300 Collector Current vs. Base-Emitter Voltage 1.0 Transition Frequency, fT (MHz) Common Emitter VCE =10V TC=25℃ 0.8 Collector Current, IC (A) 100 0.6 TC=100 ℃ 25 -25 50 30 0.4 0.2 Common Emitter VCE=5V 10 5 10 30 100 300 1000 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Collector Current, IC (mA) Base-Emitter Voltage, VBE ( V) DC Current Gain vs. Collector Current Collector-Emitter Saturation Voltage, VCE (SAT) ( V) 1000 Collector-Emitter Saturation Voltage vs. Collector Current 1 Common Emitter VCE =5V Common Emitter IC/IB =10 TC=100℃ 25 -25 500 300 0.5 0.3 DO Current Gain, hFE TC=100°C 100 0.1 50 30 25 -25 0.05 0.03 10 0.003 0.01 0.03 0.1 0.3 1 3 0.01 0.003 0.01 0.03 0.1 0.3 1 3 Collector Current, IC (A) Collector Current, IC (A) Collector Current vs. Collector-Emitter Voltage 1.0 20 10 3 5 Safe Operating Area 8 0.8 Collector Current, IC ( A) IC MAX. (Pulsed) ※ IC MAX. (Continuous) 6 1 1ms※ 10ms ※ 100ms※ Collector Current, IC ( A) 0.5 0.3 0.6 4 DC Operation TC=25℃ 0.4 IB=2mA 0.1 0.05 0.2 Common Emitter TC=25℃ 2 4 6 8 10 Collector-Emitter Voltage, VCE ( V) ※Single Nonrepetitive 0.03 Pulse TC=25°C Curves Must be Derated Linearly With Increase in Temperature. 0.01 1 3 10 30 VCEO MAX . 100 300 0 0 Collector-Emitter Voltage, VCE (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R219-009,A 2SC4793 NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R219-009,A