2SC5200

UTC 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS FEATURES * Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. * Complementary to UTC 2SA1943 TO-3PL *Pb-free plating product number: 2SC5200L ABSOLUTE MAXIMUM RATINGS (TC = 25℃) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25℃) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC TJ Tstg RATINGS 230 230 5 15 1.5 150 150 -55 ~ 150 UNIT V V V A A W ℃ ℃ ELECTRICAL CHARACTERISTICS (Tc=25℃) PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base -Emitter Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Transition Frequency Collector Output Capacitance SYMBOL V(BR) CEO VCE (sat) VBE ICBO IEBO hFE1 hFE2 fT Cob TEST CONDITIONS IC= 50mA, IB=0 IC= 8A, IB= 0.8A VCE= 5V, IC= 7A VCB = 230V, IE=0 VEB= 5V, IC=0 VCE= 5V, IC= 1A VCE= 5V, IC= 7A VCE= 5V, IC= 1A VCB= 10V, IE=0, f=1MHz MIN 230 TYP 0.40 1.0 MAX 3.0 1.5 5.0 5.0 160 UNIT V V V μA μA 55 35 60 30 200 MHz pF Note: hFE (1) Classification, R : 55 ~ 110, O : 80 ~ 160 CLASSIFICATION OF HFE1 RANK Range R 55 ~ 110 O 80 ~ 160 UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R214-005,A UTC 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTICS IC - VCE -20 IC - VBE COLLECTOR CURRENT, IC (A) COMMON EMITTER TC =25℃ -20 COLLECTOR CURRENT, IC (A) COMMON EMITTER VCE = 5V -16 800 600 400 300 250 -16 -12 200 150 -12 -8 100 50 40 30 -8 TC =100℃ 25 -25 IB = 10mA -4 -4 20 10 0 0 2 4 6 8 0 0 0.4 0.8 1.2 1.6 2.0 COLLECTOR-EMITTER VOLTAGE, V CE (V) BASE-EMITTER VOLTAGE, V BE (V) VCE(sat) - IC COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat) (V) 3 300 hFE - IC TC =100℃ 25 -25 30 10 1 DC CURRENT GAIN, hFE 100 0.3 0.1 TC =100℃ -25 25 0.03 0.01 0.01 3 1 0.01 COMMON EMITTER IC / IB = 10 0.1 1 10 100 COMMON EMITTER IC / IB = 10 0.1 1 10 100 COLLECTOR CURRENT, IC (A) COLLECTOR CURRENT, IC (A) SAFE OPERATING AREA 50 30 IC MAX. (PULSED)※ IC MAX. (CONTINUOUS) 1ms※ 10ms※ 10 COLLECTOR CURRENT, I C (A) 5 3 DC OPERATION TC =25℃ 100ms※ 1 0.5 0.3 ※SINGLE NONREPETITIVE PULSE TC = 25℃ 0.1 CURVES MUST BE DERATED LINEARLY 0.05 WITH INCREASE IN TEMPERATURE. 0.03 3 10 30 100 VCEO MAX. 300 1000 COLLECTOR-EMITTER VOLTAGE, VCE (V) UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R214-005,A UTC 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R214-005,A