2SC5353

UNISONIC TECHNOLOGIES CO., LTD 2SC5353 HIGH VOLTAGE NPN TRANSISTOR DESCRIPTION Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications NPN SILICON TRANSISTOR 1 TO-220 FEATURES * Excellent switching times: tR = 0.7µs(MAX), tF = 0.5µs (MAX) * High collectors breakdown voltage: VCEO = 800 V 1 TO-220F *Pb-free plating product number: 2SC5353L ORDERING INFORMATION Order Number Normal Lead Free Plating 2SC5353-TA3-T 2SC5353L-TA3-T 2SC5353-TF3-T 2SC5353L-TF3-T Package TO-220 TO-220F Pin Assignment 1 2 3 B C E B C E Packing Tube Tube 2SC5353L-TA3-T (1)Packing Type (2)Package Type (3)Lead Plating (1) T: Tube (2) TA3: TO-220, TF3: TO-220F (3) L: Lead Free Plating, Blank: Pb/Sn 14www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R203-031,A 2SC5353 ABSOLUTE MAXIMUM RATING (Tc = 25℃) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage SYMBOL VCBO VCEO VEBO IC ICP IB NPN SILICON TRANSISTOR RATINGS UNIT 900 V 800 V 7 V DC 3 A Collector Current 5 Pulse Base Current 1 A Ta = 25℃ 2.0 Collector Power Dissipation PD W TC = 25℃ 25 Junction Temperature TJ +150 ℃ Storage Temperature TSTG -40 ~ +150 ℃ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Tc = 25℃) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SYMBOL BVCBO BVCEO ICBO IEBO hFE(1) hFE(2) VCE(SAT) VBE(SAT) TEST CONDITIONS IC=1 mA, IE = 0 IC=10 mA, IB = 0 VCB=720V, IE= 0 VEB=7V, IC= 0 VCE=5 V, IC=1 mA VCE=5 V, IC=0.15 A IC=1.2 A, IB=0.45 A IC=1.2 A, IB=0.24 A Output MIN 900 800 TYP MAX UNIT V V 100 µA 10 µA 10 15 1.0 1.3 V V 20µS IC Input I B1 Storage time tSTG IB2 Switching time IB1 300 Ω Rise time tR 0.7 µS I B2 VCC≈360V 4.0 Fall time tF I B1 = 0.24 A, I B2 = −0.48 A, duty cycle ≤ 1 % 0.5 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R203-031,A 2SC5353 TYPICAL CHARACTERISTICS I C - VCE Common emitter 3 TC=25℃ 1.0 0.6 0.5 0.4 0.3 1 0.2 0.1 0.05 I B = 0.02 A 0 2 4 6 8 Collector-Emitter Voltage, VCE (V) 10 3 0.8 NPN SILICON TRANSISTOR I C - VBE Common emitter VCE = 5 V Collector Current, I C (A) Collector Current, IC (A) 2 2 T C=100℃ 1 25 -20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Base-Emitter Voltage， VBE (V) 1.4 0 h FE - I C 1000 VCE(SAT) - I C Collector-Emitter Saturation Voltage, VCE (SAT) (V) 10 Common emitter IC/I B = 3 DC Current Gain, hFE 100 T C=100℃ 25 10 -20 Common emitter VCE = 5 V 0.01 0.1 1 Collector Current, IC (A) 10 1 TC=100℃ 25 -20 0.1 1 Collector Current, I C (A) 10 0.1 1 0.001 0.05 0.01 10 VCE(SAT) - IC Common emitter IC/IB = 5 Switching Characteristics 10 IC = 5IB1 2I B1 = −IB2 Pulse width = 20 µs Duty cycle ≤ 1% TC=25℃ tF tR Base-Emitter Saturation Voltage, VBE (SAT) (V) Switching Time (µs) tSTG 1 -20 25 1 TC=100℃ 0.1 0.01 0.1 1 Collector Current, I C (A) 10 0.1 0.01 0.1 1 Collector Current, IC (A) 10 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R203-031,A 2SC5353 TYPICAL CHARACTERISTICS(Cont.) Safe Operating Area 10 I max (pulsed)* C 10 ms* 1 ms* 30 100 µs* NPN SILICON TRANSISTOR PD - Ta (1) (1) T C = Ta Infinite heat sink (2) No heat sink Collector Current, IC (A) 1 IC max (continuous) 100 ms* 0.1 DC operation TC=25℃ Collector Power Dissipation, PD (W) 20 * Single nonrepetitive 0.01 pulse Tc = 25℃ Curves must be derated linearly with increase VCEO max temperature. 0.001 1 3 5 10 30 50 100 300 5001000 Collector-Emitter Voltage, VCE (V) 10 (2) 0 0 80 40 120 160 Ambient Temperature, Ta=25℃ 200 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R203-031,A