UNISONIC TECHNOLOGIES CO., LTD
2SC5353B
HIGH VOLTAGE NPN
TRANSISTOR
DESCRIPTION
NPN SILICON TRANSISTOR
1
1
TO-220
TO-220F
FEATURES
* Excellent switching times: tR = 0.7μs(MAX), tF = 0.5μs (MAX)
* High collectors breakdown voltage: VCEO = 750V
TO-126C
1
Switching Regulator and High Voltage Switching Applications
High-Speed DC-DC Converter Applications.
1
TO-126
SYMBOL
2.Collector
1
1
TO-251
TO-220F1
1
TO-252
1.Base
3.Emitter
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
2SC5353BL-T60-K
2SC5353BG-T60-K
TO-126
2SC5353BL-T6C-K
2SC5353BG-T6C-K
TO-126C
2SC5353BL-TA3-T
2SC5353BG-TA3-T
TO-220
2SC5353BL-TF3-T
2SC5353BG-TF3-T
TO-220F
2SC5353BL-TF1-T
2SC5353BG-TF1-T
TO-220F1
2SC5353BL-TM3-T
2SC5353BG-TM3-T
TO-251
2SC5353BL-TN3-R
2SC5353BG-TN3-R
TO-252
Note: Pin Assignment: E: Emitter B: Base C: Collector
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
Packing
Bulk
Bulk
Tube
Tube
Tube
Tube
Tape Reel
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NPN SILICON TRANSISTOR
MARKING
TO-220 / TO-220F
TO-220F1 / TO-251 / TO-252
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TO-126 / TO-126C
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NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
900
V
Collector-Emitter Voltage
VCEO
750
V
Emitter-Base Voltage
VEBO
7
V
DC
IC
3
A
Collector Current
5
A
Pulse
ICP
Base Current
IB
1
A
TO-126/TO-126C
20
W
TO-220F/TO-220F1
Power Dissipation
PD
TO-220
25
W
TO-251/TO-252
22
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
TEST CONDITIONS
IC=1 mA, IE = 0
IC=10 mA, IB = 0
VCB=720V, IE= 0
VEB=7V, IC= 0
VCE=5 V, IC=1 mA
VCE=5 V, IC=0.15 A
IC=1.2 A, IB=0.24 A
IC=1.2 A, IB=0.24 A
tR
MIN
900
750
TYP
MAX UNIT
V
V
100
µA
10
µA
10
15
1.0
1.3
V
V
0.7
µS
4.0
µS
0.5
µS
IB1
Rise Time
SYMBOL
BVCBO
BVCEO
ICBO
IEBO
hFE1
hFE2
VCE(SAT)
VBE(SAT)
300Ω
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Switching Time
Storage Time
Fall Time
tSTG
tF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
IB2
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NPN SILICON TRANSISTOR
Collector Current, IC (A)
Collector Current, IC (A)
TYPICAL CHARACTERISTICS
Collector-Emitter Saturation Voltage vs.
Collector Current
DC Current Gain vs. Collector Current
10
Collector-Emitter Saturation Voltage,
VCE (SAT) (V)
DC Current Gain, hFE
1000
100
TC=100℃
25
10
-20
Common emitter
VCE = 5 V
1
0.001
0.01
0.1
1
Collector Current, IC (A)
1
0.1
10
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Common emitter
IC/IB = 3
0.05
0.01
TC=100℃
25
-20
0.1
1
Collector Current, IC (A)
10
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NPN SILICON TRANSISTOR
Collector Current, IC (A)
Collector Power Dissipation, PD (W)
TYPICAL CHARACTERISTICS(Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R203-035.E
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