UTC 2SC5569 NPN EPITAXIAL SILICON TRANSISTOR
DC/DC CONVERTER APPLICATIONS
FEATURES
*High current capacitance. *Low collector-to-emitter saturation voltage. *High-speed switching. *High allowable power dissipation. *Complementary to 2SA2016.
1
APPLICATIONS
*Relay drivers, lamp drivers, motor drivers, strobes
SOT-89
1:EMITTER
2:COLLECTOR
3:BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
PARAMETER
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Tc=25°C Junction Temperature Storage Temperature
SYMBOL
VCBO VCEO VEBO Ic Icp IB Pc Tj Tstg
2
VALUE
80 50 6 7 10 1.2 1.3* 3.5 150 -55 ~ +150
UNIT
V V V A A A W °C °C
* Mounted on ceramic board (250mm ×0.8mm)
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Gain Bandwidth Product Output Capacitance Turn-On Time Storage Time
SYMBOL
V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob ton tstg
TEST CONDITIONS
Ic=10μA,IE=0 Ic=1mA,RBE=∞ IE=10μA,IE=0 VCB=40V,IE=0 VEB=4V,Ic=0 VCE=2V,Ic=500mA Ic=3.5A,IB=175mA Ic=2A,IB=40mA Ic=2A,IB=40mA VCE=10V,Ic=500mA VCB=10V, f=1MHz See specified Test Circuit See specified Test Circuit
MIN
80 50 6
TYP
MAX
UNIT
V V V μA μA mV mV V MHz pF ns ns
200 160 110 0.83 330 28 30 420
0.1 0.1 560 240 170 1.2
UTC
UNISONIC TECHNOLOGIES
CO. LTD
1
QW-R208-031,A
UTC 2SC5569 NPN EPITAXIAL SILICON TRANSISTOR
PARAMETER
Fall Time
SYMBOL
tf
TEST CONDITIONS
See specified Test Circuit
MIN
TYP
25
MAX
UNIT
ns
SWITCHING TIME TEST CIRCUIT
PW=20 μs D.C. ≦ 1% INPUT VR 50Ω
IB1 IB2 RB +
100μF
OUTPUT +
470μF
RL
V BE= -5V
VCC = 25V
20I B1= -20IB2=IC =2.5A
7
90mA
Ic - V CE
80mA
8
70mA 60mA 50mA
Ic - V BE
VCE = 2V
6
100 mA
7 Collector Current, Ic (A) 6 5 4 3
75°C Ta=
Collector Current, Ic (A)
5 4 3
40mA
30mA 20mA
10mA
2 1 0 IB=0 0 0.4 0.8 1.2 1.6 Collector to Emitter Voltage, V CE (V) 2.0
2 1 0 0 0.2
0.4 0.6 0.8 1.0 1.2 Base to Emitter Voltage, V BE (V)
-25°C
25 ° C
1.4
1000 7 5 DC Current Gain,h FE 3 2 100 7 5 3 2 10 0.01
Ta=75°C 25°C -25°C
hFE - Ic
Collector-to-Emitter Saturation Voltage, VCE(sat) (mv) VCE = 2V
VCE(sat) - Ic
1000 7 5 3 2 100 7 5 3 2 10 7 5 3 2 IC /IB=20
75°C Ta=
-25°C
°C 25
23
5 7 0.1
23
5 7 1.0
23
5 7 10
1.0 0.01 2 3 5 7 0.1
23
5 7 1.0
2 3 5 7 10
Collector Current, Ic (A)
Collector Current, Ic (A)
UTC
UNISONIC TECHNOLOGIES
CO. LTD
2
QW-R208-031,A
UTC 2SC5569 NPN EPITAXIAL SILICON TRANSISTOR
10000 7 5 3 2 1000 7 5 3 2 100 7 5 3 2
VCE(sat) - Ic
IC/IB=50 Collector-to-Emitter Saturation Voltage, VBE(sat) (mv)
Collector-to-Emitter Saturation Voltage, VCE(sat) (mV)
10000 7 5 3 2 1000 7 5 3 2 100 0.01 2 3 5 7 0.1
Ta =-25 ℃
VBE(sat) - Ic
IC/IB=50
75°C
25°C
℃ 75 Ta =
25°C
-25°C
10 0.01 2 3 5 7 0.1
2 3 5 7 1.0
2 3 5 7 10
2 3 5 7 1.0
2 3 5 7 10
Collector Current,Ic -A 5 Output Capacitance, Cob (pF) 3 2 100 7 5 3 2 10 7 5 3 2
Collector Current, Ic (A) 1000 7 5 3 2 100 7 5 3 2 10
Cob - V CB
Gain-Bandwidth Produtc, f T (MHz) f=1MHz
fT - Ic
VCE=10V
5 7 0.1
2 3 5 7 1.0
23
5 7 10
23
5
5 70.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10
Collector Current, Ic (A)
Collector to Base Voltage, V CB (V)
2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2
ASO
ICP=10A 100ms
1m 10 s m s DC
2.0 Collector Dissipation, PC (W)
0μ 10
Pc - Ta
IC=7A
Collector Current, Ic (A)
1.5 1.3 1.0
Mo u nte d
s 0μ 50
s
op er at io n
on a
ce ra
mi c
bo
ar d
0.5
(2 50
0.01 0.1
Tc=25°C Single pulse For PNP,the minus sign is omitted.
mm ×
2
0.8
2 3 5 7 1.0
2 3 5 7 10
23
5 7 100
0
mm )
0
20
40
60
80
100 120 140 160
Collector to Emitter Voltage, V CE (V)
Ambient Temperature, Ta(℃)
UTC
UNISONIC TECHNOLOGIES
CO. LTD
3
QW-R208-031,A
UTC 2SC5569 NPN EPITAXIAL SILICON TRANSISTOR
4.0 3.5 Collector Dissipation, Pc (W) 3.0 2.5 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 140 160 Pc - Tc
Case Temperature, Tc(°C)
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES
CO. LTD
4
QW-R208-031,A
