2SD1060-X-AB3-R

UNISONIC TECHNOLOGIES CO., LTD 2SD1060 NPN PLANAR SILICON TRANSISTOR FEATURES * Low collector-to-emitter saturation voltage: VCE(SAT)=0.4V max/IC=3A, IB=0.3A 1 TO-126 NPN SILICON TRANSISTOR 1 SOT-89 1 TO-92 1 TO-220 1 TO-252 1 TO-251 *Pb-free plating product number: 2SD1060L ORDERING INFORMATION Ordering Number Normal Lead Free Plating 2SD1060-x-AB3-R 2SD1060L-x-AB3-R 2SD1060-x-T60-K 2SD1060L-x-T60-K 2SD1060-x-T92-B 2SD1060L-x-T92-B 2SD1060-x-T92-K 2SD1060L-x-T92-K 2SD1060-x-TA3-T 2SD1060L-x-TA3-T 2SD1060-x-TM3-T 2SD1060L-x-TM3-T 2SD1060-x-TN3-R 2SD1060L-x-TN3-R 2SD1060-x-TN3-T 2SD1060L-x-TN3-T Package SOT-89 TO-126 TO-92 TO-92 TO-220 TO-251 TO-252 TO-252 Pin Assignment 1 2 3 B C E B C E E C B E C B B C E B C E B C E B C E Packing Tape Reel Bulk Tape Box Bulk Tube Tube Tape Reel Tube www.unisonic.com.tw Copyright © 2008 Unisonic Technologies Co., Ltd 1 of 5 QW-R208-023.C 2SD1060 ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) SYMBOL VCBO VCEO VEBO IC ICP NPN SILICON TRANSISTOR RATINGS UNIT 60 V 50 V 6 V 5 A 9 A SOT-89 500 mW TO-126/TO-251 1 W Collector Dissipation PC TO-252/TO-220 2 W TO-92 625 mW Junction Temperature TJ +150 ℃ Storage Temperature TSTG -40 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25℃) PARAMETER Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Gain Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Turn-ON Time Storage Time Fall Time SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 fT Cob VCE(SAT) tON tSTG tF TEST CONDITIONS IC =1mA, IE=0 IC=1mA, RBE =∞ IC =0, IE=1mA VCB=40V, IE=0 VEB=4V, IC=0 VCE=2V, IC=1A VCE=2V, IC=3A VCE =5V, IC =1A VCB =10V, f=1MHz IC=3A, IB=0.3A See specified test circuit See specified test circuit See specified test circuit MIN 60 50 6 TYP MAX UNIT V V V mA mA 70 30 30 100 0.1 0.1 360 0.4 0.1 1.4 0.2 MHZ pF V µs µs µs CLASSIFICATION of hFE1 RANK RANGE Q 70-140 R 100-200 S 180-360 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R208-023.C 2SD1060 SWITCHING TIME TEST CIRCUIT IB1 1 IN PW=20µs tr×tf≤15ns 50 1µ (For PNP, the polarity is reversed) 10IB1= -10IB2=IC=2A -5V IB2 100 NPN SILICON TRANSISTOR OUT 10 1µ 20V Unit (resistance: Ω，capacitance: F) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R208-023.C 2SD1060 TYPICAL CHARACTERISTICS Collector Current vs. Collector-to-Emitter Voltage 10 AA 450mA 0m m mA A 40 350 300 250m 00mA 2 8 150mA 500m A NPN SILICON TRANSISTOR Collector Current vs. Base-to-Emitter Voltage 10 VCE=2V 9 8 Collector Current, IC (A) 7 0℃ 25℃ Collector Current, IC (A) 100mA 6 50mA 4 2 IB=0 0 0 0.4 0.8 1.2 1.6 2.0 2.4 Collector-to-Emitter Voltage, VCE (V) 6 5 4 3 2 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Base-to-Emitter Voltage, VBE (V) Ta=8 -20℃ 1.4 Collector-Emitter Saturation Voltage, VCE (SAT) (V) DC Current Gain, hFE 0 =8 Ta Collector-Emitter Saturation Voltage, VCE(SAT) (V) 10 5 3 2 Collector-Emitter Saturation Voltage vs. Collector Current Base-Emitter Saturation Voltage, VBE(SAT) (V) IC/IB=20 10 7 5 3 2 Base-Emitter Saturation Voltage vs. Collector Current 1.0 5 3 2 0 =8 Ta 1.0 7 5 3 2 2 IC/IB=10 IC/IB=20 0.1 5 3 2 2 3 5 2 3 5 2 3 -20℃ 25℃ 0.01 0.1 1.0 Collector Current, IC (A) 5 10 2 3 5 0.1 1.0 Collector Current, IC (A) 2 3 5 2 3 5 10 2 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R208-023.C 2SD1060 TYPICAL CHARACTERISTICS(Cont.) 2 NPN SILICON TRANSISTOR ASO ICP IC 10 0m s s 1m ms 10 Transition Frequency vs. Collector Current 10000 Transition frequency, fT (MHz) 3000 1000 300 100 30 10 3 1 0.01 0.03 0.1 0.3 1 3 Collector Current, IC (A) 10 VCE=5V f=1MHz TC=25℃ 10 Collector Current , IC (A) 7 5 3 2 DC Op 1.0 7 5 3 2 er a ti o n 0.1 5 (Single pulse with regard to 1 ~ 100ms) 7 1.0 10 100 Collector-to-Emitter Voltage, VCE (V) 2 3 5 7 2 3 5 7 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R208-023.C