2SD1609

UTC 2SD1609 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR FEATURES * Low frequency high voltage amplifier 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation (Ta=25°C) Junction Temperature Storage Temperature SYMBOL BVCBO BVCEO BVEBO Ic Ptot Tj Tstg MIN MAX 160 160 5 100 1.25 150 150 UNIT V V V mA W °C °C -50 ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance SYMBOL BVCBO BVCEO BVEBO ICBO hFE1 hFE2 VCE(sat) VBE(on) fT Cob TEST CONDITIONS IC=10µA IC=1mA IE=10µA VCB=140V VCE=5V, Ic=10mA VCE=5V, Ic=1mA Ic=30mA, IB=3mA VCE=5V, Ic=10mA VCE=5V,Ic=10mA VCB=10V, f=1MHz MIN 160 160 5 60 30 TYP MAX UNIT V V V µA 10 320 2 1.5 145 3.8 V V MHz pF CLASSIFICATION OF hFE1 RANK RANGE B 60-120 C 100-200 D 160-320 UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R204-008,A UTC 2SD1609 NPN EPITAXIAL SILICON TRANSISTOR CHARACTERISTICS CURVE UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R204-008,A UTC 2SD1609 NPN EPITAXIAL SILICON TRANSISTOR Current Gain & Collector Current 1000 Saturation Voltage(mV) 1000 Saturation Voltage &Collector Current hFE 100 VCE =5V 100 VCE(sat) @Ic=10IB 10 0.1 1 10 100 1000 10 1 10 100 1000 Collector Current (mA) On Voltage & Collector Current 10000 Cutoff Frequency (MHz) 1000 Collector Current(mA) Cutoff Frequency &Collector Current On Voltage (mV) 1000 100 VCE =5V VBE(on) @VcE=5V 100 0.1 1 10 100 1000 10 1 10 100 1000 Collector Current (mA) Capacitance& Reverse-Biased Voltage 10 10000 Collector Current (mA) Collector Current(mA) Safe Operating Area Capacitance (pF) 1000 100 PT =1ms PT =100ms PT =1s Cob 10 1 0.1 1 10 100 1000 Reverse Biased Voltage(V) 1 1 10 100 1000 Forward Voltage (V) UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R204-008,A UTC 2SD1609 NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 4 QW-R204-008,A