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2SD1624-X-AB3-R

2SD1624-X-AB3-R

  • 厂商:

    UTC(友顺)

  • 封装:

  • 描述:

    2SD1624-X-AB3-R - HIGH CURRENT SWITCHIG APPLICATION - Unisonic Technologies

  • 数据手册
  • 价格&库存
2SD1624-X-AB3-R 数据手册
UNISONIC TECHNOLOGIES CO., LTD 2SD1624 HIGH CURRENT SWITCHIG APPLICATION DESCRIPTION The UTC 2SD1624 applies to voltage regulators, relay drivers, lamp drivers, and electrical equipment. NPN SILICON TRANSISTOR FEATURES * Adoption of FBET, MBIT processes * Low collector-to-emitter saturation voltage * Fast switching speed. * Large current capacity and wide ASO. Lead-free: 2SD1624L Halogen-free: 2SD1624G ORDERING INFORMATION Normal 2SD1624-x-AB3-R Ordering Number Lead Free 2SD1624L-x-AB3-R Halogen Free 2SD1624G-x-AB3-R Package SOT-89 Pin Assignment 1 2 3 B C E Packing Tape Reel MARKING XX DG Date Code L: Lead Free G: Halogen Free www.unisonic.com.tw Copyright © 2007 Unisonic Technologies Co., Ltd 1 of 5 QW-R208-005.C 2SD1624 PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Power Dissipation( Tc=25°C) NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) SYMBOL RATINGS UNIT VCBO 60 V VCEO 50 V VEBO 6 V Pc 500 mW DC Ic 3 A Collector Current PULSE Icp 6 A Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Gain-Bandwidth Product Output Capacitance Turn-ON Time Storage Time Fall Time SYMBOL BVCBO BVCEO BVEBO VCE(SAT) VBE(SAT) ICBO IEBO hFE fT Cob tON tSTG tF TEST CONDITIONS IC=10μA, IE=0 IC=1mA, RBE=∞ IE=10μA, IC=0 IC=2A, IB=100mA IC=2A, IB=100mA VCB=40V, IE=0 VEB=4V, IC=0 VCE=2V, Ic=100mA VCE=10V, IC=50mA VCE=10V, f=1MHz See test circuit See test circuit See test circuit MIN 60 50 6 TYP MAX UNIT V V V V V μA μA MHz pF ns ns ns 0.19 0.94 100 150 25 70 650 35 0.5 1.2 1 1 560 CLASSIFICATION OF hFE RANK RANGE R 100-200 S 140-280 T 200-400 U 280-560 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R208-005.C 2SD1624 TEST CIRCUIT PW=20µS Duty Cycle≤1% INPUT I B1 RB I B2 50Ω VR + 100µF -5V Ic=10, IB1= -10, IB2=1A NPN SILICON TRANSISTOR OUTPUT 25Ω 25V + 470µF UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R208-005.C 2SD1624 TYPICAL CHARACTERISTICS NPN SILICON TRANSISTOR Collector Current vs. Base to Emitter Voltage 3.0 2.8 Collector Current, IC (A) 2.4 2.0 -25℃ 1000 7 5 DC Current Gain vs. Collector Current VCE=2V VCE=2V DC Current Gain, hFE 3 2 Ta=75℃ Ta=7 5 1.6 1.2 0.8 0.4 0 0 25℃ ℃ 25℃ -25℃ 100 7 5 3 2 0.2 0.4 0.6 1.0 0.8 Base to Emitter Voltage, VBE (V) 1.2 7 0.01 2 3 57 0.1 2 3 5 7 1.0 Collector Current, IC (A) 23 5 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R208-005.C 2SD1624 TYPICAL CHARACTERISTICS NPN SILICON TRANSISTOR 10 5 3 2 ASO. ICP IC D 10 0m 1.8 1.6 1.5 1.4 1.2 1.0 0.8 0.6 0.5 0.4 0.2 2 3 5 7 Collector Dissipation vs. Ambient Temperature M ou 10 m s s 1.0 5 3 2 nt (2 ed 50 on m ce m 2 ra ×0 m .8 ic m bo ma rd ) C O pe t ra io n 0.1 5 3 2 2 Mounted on ceramic board 2 (250mm2×0.8mm) Ta=25℃ one pulse 5 No heat sink 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta (℃) 1.0 10 100 Collector to Emitter Voltage, VCE (V) 7 2 3 57 0 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R208-005.C
2SD1624-X-AB3-R 价格&库存

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