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2SD1624G-S-AB3-R

2SD1624G-S-AB3-R

  • 厂商:

    UTC(友顺)

  • 封装:

    SOT89-3

  • 描述:

    硅NPN台面型晶体管

  • 数据手册
  • 价格&库存
2SD1624G-S-AB3-R 数据手册
UNISONIC TECHNOLOGIES CO., LTD 2SD1624 NPN SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION  DESCRIPTION The UTC 2SD1624 applies to voltage regulators, relay drivers, lamp drivers, and electrical equipment.  FEATURES * Adoption of FBET, MBIT processes * Low collector-to-emitter saturation voltage * Fast switching speed. * Large current capacity and wide ASO  ORDERING INFORMATION Order Number 2SD1624G-x-AB3-R Note: Pin Assignment: B: Base C: Collector  Package SOT-89 Pin Assignment 1 2 3 B C E Packing Tape Reel E: Emitter MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 5 QW-R208-005.F 2SD1624  NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25C, unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Power Dissipation( Tc=25C) SYMBOL RATINGS UNIT VCBO 60 V VCEO 50 V VEBO 6 V PC 500 mW 3 A DC IC Collector Current PULSE ICP 6 A Junction Temperature TJ 150 C Storage Temperature TSTG -55 ~ +150 C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Gain-Bandwidth Product Output Capacitance Turn-ON Time Storage Time Fall Time  SYMBOL BVCBO BVCEO BVEBO VCE(SAT) VBE(SAT) ICBO IEBO hFE fT COB tON tSTG tF TEST CONDITIONS IC=10A, IE=0 IC=1mA, RBE= IE=10A, IC=0 IC=2A, IB=100mA IC=2A, IB=100mA VCB=40V, IE=0 VEB=4V, IC=0 VCE=2V, Ic=100mA VCE=10V, IC=50mA VCE=10V, f=1MHz See test circuit See test circuit See test circuit MIN 60 50 6 TYP MAX 0.19 0.94 0.5 1.2 1 1 560 100 150 25 70 650 35 UNIT V V V V V A A MHz pF ns ns ns CLASSIFICATION OF hFE RANK RANGE R 100-200 S 140-280 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw T 200-400 U 280-560 2 of 5 QW-R208-005.F 2SD1624  NPN SILICON TRANSISTOR TEST CIRCUIT PW=20µS Duty Cycle≤1% I B1 INPUT RB OUTPUT I B2 50Ω 25Ω VR + 100µF + 470µF 25V -5V Ic=10, IB1= -10, IB2=1A UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R208-005.F 2SD1624 TYPICAL CHARACTERISTICS Collector Current vs. Base to Emitter Voltage 3.0 1000 VCE=2V 2.8 DC Current Gain vs. Collector Current VCE=2V 7 5 DC Current Gain, hFE 2.4 1.2 -25℃ ℃ 1.6 25℃ 2.0 Ta=7 5 Collector Current, IC (A)  NPN SILICON TRANSISTOR 0.8 0.4 Ta=75℃ 3 2 25℃ -25℃ 100 7 5 3 0 0 2 0.2 0.4 0.6 1.0 0.8 Base to Emitter Voltage, VBE (V) 1.2 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC (A) 2 3 5 4 of 5 QW-R208-005.F 2SD1624  NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS(Cont.) ASO. 10 1.8 ICP 5 D s O t ra 0.8 io n 3 2 0.1 5 3 2 2 0.6 0.5 0.4 Mounted on ceramic board (250mm22×0.8mm) Ta=25℃ one pulse 5 7 2 3 nt (2 ed 50 on m ce m 2 ra ×0 m .8 ic m bo m a rd ) 1.0 pe 5 M ou 1.2 C 1.0 s 2 m 10 0m 1.6 1.5 1.4 10 IC 3 Collector Dissipation vs. Ambient Temperature 5 7 0.2 2 3 5 7 1.0 10 100 Collector to Emitter Voltage, VCE (V) No heat sink 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta (℃) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R208-005.F
2SD1624G-S-AB3-R 价格&库存

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2SD1624G-S-AB3-R
  •  国内价格
  • 1+0.64240
  • 200+0.41470
  • 2000+0.36080
  • 4000+0.31900

库存:3980

2SD1624G-S-AB3-R
    •  国内价格
    • 5+0.63936
    • 50+0.52013
    • 150+0.46052
    • 500+0.41580
    • 2500+0.33729

    库存:3252

    2SD1624G-S-AB3-R
    •  国内价格
    • 1+0.43147
    • 30+0.41537
    • 100+0.39927
    • 500+0.36707
    • 1000+0.35097
    • 2000+0.34131

    库存:3800