2SD1664

UTC 2SD1664 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1664 is an epitaxial planar type NPN silicon transistor. 1 FEATURES *Low VCE(sat): VCE (sat)= 0.15V(Typ) (Ic/IB= 500mA/50mA) *Complement the 2SB1132. SOT-89 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC PULSE (Note1) Collector Power Dissipation SYMBOL VCBO VCEO VEBO Ic Pc RATING 40 32 5 1 2 0.5 2 (Note2) 150 -55 ~ +150 UNIT V V V A A W W °C °C Junction Temperature Tj Storage Temperature TSTG Note1: Duty=1/2,Pw=20ms Note2: When mounted on a 40*40*0.7 mm ceramic board. ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified) PARAMETER Collector Base Breakdown Voltage Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Transfer Ratio Collector-Emitter Saturation Voltage Transition Frequency Output Capacitance SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob TEST CONDITIONS Ic= 50μA Ic= 1mA IE=50μA VCB=20V VEB= 4V VCE= 3V,Ic= 100mA Ic/IB=500mA /50mA VCE=5V, IE= - 50 mA,f=100MHz VCB= 10V, IE= 0 A,f=1MHz MIN 40 32 5 TYP MAX UNIT V V V μA μA V MHz pF 82 0.15 150 15 0.5 0.5 390 0.4 CLASSIFICATION OF hFE RANK RANGE P 82-180 Q 120-270 R 180-390 UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R208-025,A UTC 2SD1664 500 Collector Current: Ic(mA) NPN EPITAXIAL SILICON TRANSISTOR 500 Figure 2.Grounded Emitter OutputCharacteristics 4.5 mA 2.5mA 3.0mA 3.5mA 4.0mA 2.0mA 1.5mA ELECTRICAL CHARACTERISTICS CURVES Figure 1.Grounded Emitter PropagationCharacteristics V CE =6V 200 T a=100 ℃ T a=25 ℃ T a=55℃ Collector Current: Ic(mA) 100 50 20 10 5 2 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Base toEmitter Voltage:V BE(V) Figure 3.DC Current Gain vs.Collector Current (I) 2000 1000 DC Current Gain:hFE DC Current Gain:hFE 500 T a=25℃ 2000 Vc E = 3V 1000 500 0 0 400 300 1.0mA 200 0.5mA 100 T a=25℃ IB =0mA 0.4 0.8 1.2 1.6 2.0 Collector toEmitter Voltage:V CE (V) Figure 4.DC Current Gain vs.Collector Current ( II) 200 Vc E= 3V Vc E = 1V 200 T a=100℃ T a=25 ℃ 100 50 1 100 50 T a= -55 ℃ 2 5 10 20 50 100 200 500 1000 Collector Current :Ic(mA) 2 5 10 20 50 100 200 5001000 Collector Current :Ic(mA) Collector Saturation Voltage:V CE(sat) ( V) 1 Collector Saturation Voltage:V CE(sat) ( V) 0.5 Figure5.Collector-emitter Saturation Voltage vs.Collector Current (I) T a=25℃ Figure6.Collector-emitter Saturation Voltage vs.Collector Current (II) 0.5 IC/ IB=10 0.2 0.1 0.05 IC /IB =50 IC /IB =20 IC /IB =10 0.02 0.01 1 2 5 10 20 50 100200 5001000 Collector Current :Ic(mA) 0.2 0.1 0.05 T a=100℃ T a=-40℃ 0.02 0.01 1 2 5 10 20 50 100200 5001000 Collector Current :Ic(mA) T a=25℃ UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R208-025,A UTC 2SD1664 NPN EPITAXIAL SILICON TRANSISTOR Figure 8. Collector Output Capacitance vs.Collector-base Voltage Ta=25℃ f=1MHz IB=0A Figure 7.Gain Bandwidth Product vs. Emitter Current Collector Output Capacitance:Cob (pF) Ta=25℃ VCE =5V Transition Frequency:fT(MHz) 200 100 50 20 100 50 10 20 -1 -2 -5 -10 -20 -50 -100 Emitter Current :IB(mA) 5 0.5 1 2 5 10 20 Collector to Base Voltage:VCB(V) Figure 9.Safe Operation Area Transient Thermal Resistance:Rth (℃/W) 5 2 Collector Current:Ic (A) 1 0.5 0.2 0.1 0.05 Ta=25℃ 0.02 *Single pulse 0.01 0.1 0.2 0.5 1 2 5 10 20 50 Collector to Emitter Voltage:VCE(V) PW s* 0m =1 Figure 10 .Transient Thermal Resistance 1000 Ta=25℃ 100 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. s* m 00 =1 PW DC 10 1 0.1 0.001 0.01 0.1 1 10 Time:t(s) 100 1000 UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R208-025,A