2SD1664G-X-AB3-R

UNISONIC TECHNOLOGIES CO., LTD 2SD1664 MEDIUM POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1664 is an epitaxial planar type NPN silicon transistor. NPN SILICON TRANSISTOR FEATURES *Low VCE(SAT): VCE (SAT)= 0.15V(Typ.) (IC/IB= 500mA/50mA) * Complement the 2SB1132. 1 SOT-89 Lead-free: 2SD1664L Halogen-free:2SD1664G ORDERING INFORMATION Normal 2SD1664-x-AB3-R Ordering Number Lead Free Plating 2SD1664L-x-AB3-R Halogen Free 2SD1664G-x-AB3-R Package SOT-89 Pin Assignment 1 2 3 B C E Packing Tape Reel www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd 1 of 4 QW-R208-025.C 2SD1664 ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ) NPN SILICON TRANSISTOR PARAMETER SYMBOL RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 32 V Emitter-Base Voltage VEBO 5 V Collector Current DC 1 A IC Collector Current (Duty=1/2, PW=20ms) Pulse 2 A Collector Power Dissipation PC 0.5 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector Base Breakdown Voltage BVCBO IC= 50μA Collector Emitter Breakdown Voltage BVCEO IC= 1mA Emitter Base Breakdown Voltage BVEBO IE=50μA Collector Cut-Off Current ICBO VCB=20V Emitter Cut-Off Current IEBO VEB= 4V DC Current Gain hFE VCE= 3V, Ic= 100mA Collector-Emitter Saturation Voltage VCE(SAT) IC/IB=500mA /50mA Transition Frequency fT VCE=5V, IE=-50mA, f=100MHz Output Capacitance Cob VCB= 10V, IE= 0A, f=1MHz MIN 40 32 5 TYP MAX UNIT V V V μA μA V MHz pF 82 0.15 150 15 0.5 0.5 390 0.4 CLASSIFICATION OF hFE RANK RANGE P 82-180 Q 120-270 R 180-390 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R208-025.C 2SD1664 TYPICAL CHARACTERISTICS 500 200 Collector Current, IC(mA) 100 50 20 10 5 2 1 0 0.2 0.4 0.6 0.8 1.0 1.2 Base-Emitter Voltage, VBE(V) 1.4 1.6 0 0 Ta=25°C Ta= 55°C Grounded Emitter Propagation Characteristics VCE =6V Ta=100°C Collector Current, IC(mA) 400 500 NPN SILICON TRANSISTOR Grounded Emitter Output Characteristics 4.5 mA 2.5mA 3.0mA 3.5mA 4.0mA 2.0mA 1.5mA 300 1.0mA 200 0.5mA 100 Ta=25°C IB =0mA 2.0 0.4 0.8 1.2 1.6 Collector-Emitter Voltage, VCE(V) 2000 DC Current Gain vs.Collector Current (I) Ta=25°C 2000 DC Current Gain vs.Collector Current (II) VcE= 3V 1000 DC Current Gain, hFE 500 1000 DC Current Gain, hFE 500 200 VcE= 3V VcE= 1V 200 Ta=100°C Ta=25°C 100 50 1 2 100 50 Ta= -55°C 2 5 10 20 50 100 200 500 1000 Collector Current, IC(mA) 5 10 20 50 100 200 500 1000 Collector Current, IC(mA) 1 0.5 Collector Saturation Voltage, VCE(SAT) ( V) Collector-Emitter Saturation Voltage vs. Collector Current (I) Collector Saturation Voltage:VCE(SAT) ( V) Ta=25°C 0.5 Collector-Emitter Saturation Voltage vs. Collector Current (II) IC/ IB=10 0.2 IC/IB=50 0.2 0.1 Ta=100°C Ta=-40°C 0.02 0.01 1 2 5 10 20 50 100 200 Collector Current, IC(mA) 500 1000 0.1 0.05 IC/IB=20 IC/IB=10 0.05 Ta=25°C 0.02 0.01 1 2 5 10 20 50 100 200 Collector Current, IC(mA) 500 1000 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R208-025.C 2SD1664 TYPICAL CHARACTERISTICS(Cont.) Gain Bandwidth Product vs. Emitter Current Ta=25°C Collector Output Capacitance, COB (pF) VCE =5V Transition Frequency, fT(MHz) 200 100 NPN SILICON TRANSISTOR Collector Output Capacitance vs.CollectorBase Voltage Ta=25°C f=1MHz 50 IB=0A 20 100 50 10 20 -1 5 -2 -5 -10 -20 -50 -100 0.5 1 2 5 10 20 Emitter Current, IE (mA) Safe Operation Area 1000 Transient Thermal Resistance, RTH (°C/W) Collector to Base Voltage, VCB(V) Transient Thermal Resistance Ta=25°C 5 2 = PW 1 Collector Current, Ic (A) PW 100 10 * ms 0.5 0.2 0.1 0.05 Ta=25°C 0.02 *Single pulse 0.01 0.1 0.2 0.5 m 00 =1 s* DC 10 1 1 2 5 10 20 50 0.1 0.001 0.01 0.1 1 Time, t(s) 10 100 1000 Collector-Emitter Voltage, VCE(V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R208-025.C