2SD1691

UTC 2SD1691 NPN EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES *High Power Dissipation: Pc=1.5W(Ta=25℃) *Complementary to 2SB1151 1 TO-126C 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Ta=25℃ Tc=25℃ DC Pulse (Note 1) SYMBOL VCBO VCEO VEBO Ic Icp IB Pc Tj Tstg RATING 60 60 7 5 8 1 1.5 20 150 -55 ~ +150 UNIT V V V A A W ℃ ℃ Junction Temperature Storage Temperature Range Note 1 :PW≦10ms,Duty Cycle≦50% ELECTRICAL CHARACTERISTICS(Ta=25℃,unless otherwise specified ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain SYMBOL ICBO IEBO hFE1 hFE2* hFE3 VCE(sat)* VBE(sat)* TEST CONDITIONS VCB=50V,IE=0 VEB=7V,Ic=0 VCE=1V,Ic=0.1A VCE=1V,Ic=2A VCE=2V,Ic=5A Ic=2A,IB=0.2A Ic=2A,IB=0.2A MIN TYP. MAX. UNIT 10 10 μA μA 60 160 50 0.1 0.9 400 0.3 1.2 V V Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R217-003,A UTC 2SD1691 NPN EPITAXIAL SILICON TRANSISTOR CHARACTERISTIC Switching Time Turn On Time Storage Time Fall Time SYMBOL Ton Tstg Tf IB1 TEST CONDITIONS 20μsec IB1 INPUT 5Ω IB2 IB1=-IB2=0.2A DUTY CYCLE≦1% Ω IB2 Vcc=10V OUTPUT MIN TYP. MAX. UNIT 0.2 1.1 0.2 1 2.5 1 μs * : Pulse test: PW≦50μS, Duty Cycle≦2% Pulse CLASSIFICATION OF hFE2 RANK RANGE O 160-320 Y 200-400 ELECTRICAL CHARACTERISTICS CURVES Pc - Ta 25 POWER DISSIPATION Pc(W) 1 dT - Tc 160 140 Ic DERATIN dT(%) 20 15 10 5 0 1 2 Tc=Ta INFINITE HEAT SINK NO HEAT SINK 120 100 80 60 40 20 S/b Lim ited Di ss ipa ti o nL im ite d 2 0 50 100 150 200 0 0 25 50 75 100 125 150 175 200 AMBIENT TEMPERATURE Ta(℃) CASE TEMPERATURE Tc(℃) REVERSE BIAS SAFE OPERATING AREA 10 COLLECTOR CURRENT Ic(A) SAFE OPERATING AREA 10 COLLECTOR CURRENT Ic(A) 5 3 Ic(Pulse)MAX. Ic(DC)MAX. s* 20 Di 0m ss s ip at io n Lim ite d 10 m 2m s* 8 6 4 2 0 1 0.5 0.3 VCEO (MAX.) 0.1 *SINGLE NONREPETIVE PULSE Ta=25℃ CURVES MUST BE DERATED LINEARLY WITH INCREASE INTEMPERATURE s/ b Li m ite d 1 3 5 10 30 50 100 0 20 VCEO (SUS). 40 60 80 100 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER VOLTAGE VCE(V) UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R217-003,A UTC 2SD1691 NPN EPITAXIAL SILICON TRANSISTOR Ic - VCE 10 COLLECTOR CURRENT Ic(A) A 15 0m 10 0m A hFE - Ic 1k 500 300 100 50 30 10 5 3 1 0.01 0.03 0.1 0.3 1 3 10 IB=80mA IB=60m A DC CURRENT GAIN hFE IB = IB = 8 6 200 mA VCE=2V VCE=1V A IB=40m A IB=30m IB= 4 2 0 IB=20mA IB=10mA IB=0mA 0 0.4 0.8 1.2 1.6 2.0 COLLECTOR-EMITTER VOLTAGE VCE(V) COLLECTOR CURRENT Ic(A) STATURATION VOLTAGE VBE(sat),VCE(sat) (V) 10 5 3 1 0.5 0.3 0.1 0.05 0.03 0.01 0.01 VBE(sat),VCE(sat) - Ic Ic/IB=10 VBE(sat) VCE(sat) 0.03 0.1 0.3 1 3 10 COLLECTOR CURRENT Ic(A) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R217-003,A