2SD1691G-X-T60-K

UNISONIC TECHNOLOGIES CO., LTD 2SD1691 LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES *High Power Dissipation *Complementary to 2SB1151 1 NPN SILICON TRANSISTOR 1 TO-220 TO-220F1 1 TO-126 1 TO-126C ORDERING INFORMATION Ordering Number Lead Free Plating Halogen Free 2SD1691L-x-T60-K 2SD1691G-x-T60-K 2SD1691L-x-T6C-K 2SD1691G-x-T6C-K 2SD1691L-x-TA3-T 2SD1691G-x-TA3-T 2SD1691L-x- TF1-T 2SD1691G-x- TF1-T Package TO-126 TO-126C TO-220 TO-220F1 Pin Assignment 1 2 3 E C B E C B B C E B C E Packing Bulk Bulk Tube Tube www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 4 QW-R204-015,C 2SD1691 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) NPN SILICON TRANSISTOR PARAMETER SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 7 V DC Ic 5 Collector Current A Pulse (PW≦10ms,Duty Cycle≦50%) Icp 8 Base Current IB 1 A TO-126/ TO-126C 20 23 Collector Power Dissipation (Tc=25°C) TO-220F1 Pc W TO-220 54 Junction Temperature TJ 150 °C Storage Temperature Range TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25°C,unless otherwise specified ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Turn On Time Switching Time Storage Time Fall Time SYMBOL ICBO IEBO hFE1 hFE2 hFE3 VCE(SAT) (Note) VBE(SAT) (Note) TON TSTG TF IB1 IB2 IB1=-IB2=0.2A DUTY CYCLE≦1% Ω IB2 Vcc=10V TEST CONDITIONS VCB=50V,IE=0 VEB=7V,Ic=0 VCE=1V,Ic=0.1A VCE=1V,Ic=2A VCE=2V,Ic=5A Ic=2A,IB=0.2A Ic=2A,IB=0.2A 20μsec IB1 INPUT 5Ω OUTPUT MIN TYP MAX 10 10 400 UNIT μA μA 60 160 50 0.1 0.9 0.2 1.1 0.2 0.3 1.2 1 2.5 1 V V μs Note: Pulse test: PW≦50μS, Duty Cycle≦2% Pulse CLASSIFICATION OF hFE2 RANK RANGE O 160-320 Y 200-400 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R204-015,C 2SD1691 TYPICAL CHARACTERISTICS NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R204-015,C 2SD1691 NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R204-015,C