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2SD1802_2

2SD1802_2

  • 厂商:

    UTC(友顺)

  • 封装:

  • 描述:

    2SD1802_2 - HIGH CURRENT SWITCHING APPLICATION - Unisonic Technologies

  • 数据手册
  • 价格&库存
2SD1802_2 数据手册
UTC 2SD1802 NPN EPITAXIAL PLANAR SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION DESCRIPTION The UTC 2SD1802 applies to voltage regulators, relay drivers, lamp drivers, and electrical equipment. FEATURES *Adoption of FBET, MBIT processes *Large current capacity and wide ASO *Low collector-to-emitter saturation voltage *Fast switching speed 1 TO-252 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Power Dissipation Tc=25°C Collector Current(DC) Collector Current(PULSE) Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Pc Ic Icp Tj TSTG VALUE 60 50 6 1 15 3 6 150 -55 ~ +150 UNIT V V V W W A A °C °C ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER Collector Cutoff Current Emitter Cutoff Current DC Current Gain (note) Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage B-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage Turn-on Time SYMBOL ICBO IEBO hFE1 hFE2 fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton TEST CONDITIONS VCB=40V,IE=0 VEB=4V,IC=0 VCE=2V, Ic=100mA VCE=2V, Ic=3A VCE=10V,IC=50mA VCB=10V,f=1MHz IC=2A,IB=100mA IC=2A,IB=100mA IC=10µA,IE=0 IC=1mA,RBE=∞ IE=10µA,IC=0 See test circuit MIN TYP MAX 1 1 560 UNIT µA µA 100 35 150 25 0.19 0.94 60 50 6 70 0.5 1.2 MHz pF V V V V V ns UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R209-001,A UTC 2SD1802 NPN EPITAXIAL PLANAR SILICON TRANSISTOR PARAMETER Storage Time Fall Time SYMBOL tstg tf TEST CONDITIONS See test circuit See test circuit MIN TYP 650 35 MAX UNIT ns ns CLASSIFICATION OF hFE1 RANK RANGE R 100-200 S 140-280 T 200-400 U 280-560 TEST CIRCUIT (Unit : resistance : Ω, capacitance : F) UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R209-001,A UTC 2SD1802 NPN EPITAXIAL PLANAR SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R209-001,A UTC 2SD1802 NPN EPITAXIAL PLANAR SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 4 QW-R209-001,A
2SD1802_2 价格&库存

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