UNISONIC TECHNOLOGIES CO.,
2SD1803
NPN EPITAXIAL SILICON TRANSISTOR
HIGH CURRENT SWITCHING APPLICATION
DESCRIPTION
The UTC 2SD1803 applies to relay drivers, high-speed inverters, converters ,and other general high-current switching applications.
1
FEATURES
*Low collector-to-emitter saturation voltage. *High current and high fT. *Excellent linerarity of hFE. *Fast switching time.
TO-251
*Pb-free plating product number:2SD1803L
PIN CONFIGURATION
PIN NO. PIN NAME 1 BASE 2 COLLECTOR 3 EMITTER
ORDERING INFORMATION Order Number Normal Lead free 2SD1803-TM3-T 2SD1803L-TM3-T Package TO-251 Packing Tube
www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co.,
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QW-R213-007,B
2SD1803
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage DC Collector Current PULSE Tc=25℃ Power Dissipation Ta=25℃ Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC ICM PD TJ TSTG
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS (Ta = 25℃)
RATINGS 60 50 6 5 8 20 1 +150 -40 ~ +150 UNIT V V V A A W W ℃ ℃
ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified.)
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage B-E Saturation Voltage Turn-on Time Storage Time Fall Time SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 fT Cob VCE(sat) VBE(sat) tON tS tF TEST CONDITIONS IC=10µA, IE=0 IC=1mA, RBE=∞ IE=10µA, IC=0 VCB=40V, IE=0 VEB=4V, IC=0 VCE=2V, IC=0.5A VCE=2V, IC=4A VCE=5V, Ic=1A VCB=10V, f=1MHz IC=3A, IB=0.15A IC=3A, IB=0.15A See Test Circuit See Test Circuit See Test Circuit MIN 60 50 6 TYP MAX UNIT V V V µA µA
70 35 180 40 220 0.95 50 500 20
1 1 400
400 1.3
MHz pF mV V ns ns ns
CLASSIFICATION OF hFE 1
RANK RANGE Q 70 ~ 140 R 100 ~ 200 S 140 ~ 280 T 200 ~ 400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2
QW-R213-007,B
2SD1803
TEST CIRCUIT
INPUT
NPN EPITAXIAL SILICON TRANSISTOR
IB1 RB IB2 50 VR + 100μ PW=20μS Duty Cycle ≦1% -5V + 470μ 25V RL OUTPUT
Ic=10IB1 =-10IB2=2A
(Unit : (resistance : Ω, capacitance : F))
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R213-007,B
2SD1803
■
NPN EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERICS
Ic -VCE 5 30mA Colletcor Current, Ic (A) Colletcor Current, Ic (A) 4 35mA 40mA 50mA 45mA 4 25mA 5
30mA
Ic -VCE
25mA 20mA
3
20mA 15mA
3
15mA 10mA 5mA
2
10mA 5mA IB =0 0.4 0.8 1.2 1.6 2.0
2
1 0 0
1 0 0 IB =0 2 4 6 8 10
Collector to Emitter Voltage, VCE ( V) Ic -VBE 6 Colletcor Current, Ic (A) 5 DC Current Gain, hFE 4 3 2 1 0 0 VCE=2V 1000 7 5 3 2 100 7 5 3 2
Collector to Emitter Voltage, VCE ( V) hFE -I c V CE=2V Ta=75℃
Ta=75℃ Ta=25℃ Ta=-25℃
Ta=25℃
Ta=-25℃
0.2
0.4
0.6
0.8
1.0
1.2
10 23 57 5 7 0.01 0.1 2 3 5 71.0 Collector Current, IC (A)
2 3 5 7 10
Base to Emitter Voltage, V BE ( V)
fT -I c 1000 Gain-Bandwidth Product,fT -MHz 7 5 VCE=5V Output Capacitance, Cob (pF) 3 2 100 7 5 3 2 23 57 23 57 10 5 7 1.0
Cob -VcB f=1MHz
3 2 100 7 5 3 2 10 2 3 5 7 0.1 1.0 10
2
3
5 7 10
2
3
5 7 100
Colletcor Current, Ic (A)
Colletcor to Base Voltage, VCB (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R213-007,B
2SD1803
TYPICAL CHARACTERICS(cont.)
VCE(sat) -Ic 5
NPN EPITAXIAL SILICON TRANSISTOR
VBE(sat) -Ic Ic/IB=20 10 Ic/IB=20 7 5 3 2
Collector to Emitter Saturation Voltage, VCE (sat) (mV)
1000 7 5 3 2 100 7 5 3 2 Ta=75℃
Base to Emitter Saturation Voltage, VBE(sat) (V)
3 2
1.0 7 5
Ta=-25℃
Ta=-25℃
Ta=25℃ 2 3 5 710
10 5 70.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC (A) ASO 2 10 7 5 3 2 1.0 7 5 3 2
Icp
Ta=25℃ Ta=75℃ 3 2 3 5 7 1.0 2 3 5 7 10 5 7 0.01 2 3 5 7 0.1 Collector Current, IC (A) PD -Ta
10ms
24 1ms
100ms
Power Dissipation, PD ( W)
Ic
Collector Current, IC (A)
20 16 12 8 4 No heat sink 1 00
DC nT tio ra pe O
0.1 7 5 3 2 Tc=25℃ 0.01 0.1 2 3 5 7 1.0
Colletcor to Emitter Voltage, VCE (V)
U TC assum es no responsibility for equipm ent failures that result from using products at v alues that ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or other param eters) listed in products specifications of any and all UT C products described or contained herein. UT C products are not designed for use in life support appliances, dev ices or system s where m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate and reliable and m ay be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
D C
℃ 25 a= nT t io ra pe O
23
5 7 10
℃ 25 c=
2 3 5 7100
20
40
60
80
100
120
140 160
Ambient Temperature, Ta (℃)
5
QW-R213-007,B