2SD1803G-S-TN3-R

UNISONIC TECHNOLOGIES CO., LTD 2SD1803 NPN SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION  DESCRIPTION The UTC 2SD1803 applies to relay drivers, high-speed inverters, converters, and other general high-current switching applications.  FEATURES *Low Collector-To-Emitter Saturation Voltage. *High Current And High fT. *Excellent Linearity Of hFE. *Fast Switching Time.  ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 2SD1803L-x-TM3-T 2SD1803G-x-TM3-T TO-251 2SD1803L-x-TN3-R 2SD1803G-x-TN3-R TO-252 2SD1803G-x-K08-5060-R DFN-8(5×6) Note: Pin Assignment: C: Collector B: Base E: Emitter  1 B B E 2 C C E Pin Assignment 3 4 5 6 7 E E E B C C C 8 C Packing Tube Tape Reel Tape Reel MARKING TO-251 / TO-252 www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd DFN-8(5×6) 1 of 6 QW-R209-014.H 2SD1803  NPN SILICON TRANSISTOR PIN CONFIGURATION DFN-8(5×6) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R209-014.H 2SD1803  NPN SILICON TRANSISTOR ABSOLUATE MAXIUM RATINGS (TA = 25°C, unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage RATINGS UNIT 60 V 50 V 6 V DC 5 A Collector Current 8 PULSE TA=25°C 1 PD Power Dissipation W TC=25°C 20 Junction Temperature TJ +150 °C Storage Temperature TSTG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified.) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain C-E Saturation Voltage B-E Saturation Voltage Gain-Bandwidth Product Output Capacitance Turn-on Time Storage Time Fall Time  SYMBOL VCBO VCEO VEBO IC ICM SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(SAT) VBE(SAT) fT Cob tON tS tF TEST CONDITIONS IC=10μA, IE=0 IC=1mA, RBE= IE=10A, IC=0 VCB=40V, IE=0 VEB=4V, IC=0 VCE=2V, IC=0.5A VCE=2V, IC=4A IC=3A, IB=0.15A IC=3A, IB=0.15A VCE=5V, IC=1A VCB=10V, f=1MHz See Test Circuit See Test Circuit See Test Circuit MIN 60 50 6 TYP MAX 1 1 400 70 35 220 0.95 180 40 50 500 20 400 1.3 UNIT V V V μA μA mV V MHz pF ns ns ns CLASSIFICATION OF hFE1 RANK RANGE Q 70 ~ 140 R 100 ~ 200 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw S 140 ~ 280 T 200 ~ 400 3 of 6 QW-R209-014.H 2SD1803  NPN SILICON TRANSISTOR TEST CIRCUIT IB 1 INPUT OUTPUT RB IB 2 RL VR 50 + 100μ + 470μ 25V PW=20μS Duty Cycle≦1% -5V Ic=10IB1=-10IB2=2A (Unit : (resistance : , capacitance : F)) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R209-014.H 2SD1803 ■ NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS Ic -VCE Ic -VCE 5 5 25mA 30mA 30mA 35mA 40mA 50mA 45mA 4 4 20mA 3 25mA 20mA 3 15mA 15mA 2 5mA 5mA 1 1 IB=0 0 0 0.4 0.8 1.2 1.6 10mA 2 10mA IB=0 0 2.0 0 2 Collector to Emitter Voltage, VCE (V) 4 6 10 Collector to Emitter Voltage, VCE (V) Ic -VBE C hFE -I c 6 1000 VCE=2V VCE=2V 7 5 5 Ta=75 C 3 4 2 3 100 Ta=75 C 2 Ta=25 C 0.2 0.4 Ta=-25 C 3 Ta=-25 C 0 Ta=25 C 7 5 1 0 8 0.8 0.6 1.0 2 1.2 10 5 7 0.01 Base to Emitter Voltage, VBE (V) 2 3 5 7 0.1 2 3 5 71.0 2 3 5 7 10 Collector Current, IC (A) fT -I c Cob -VcB 5 1000 VCE=5V 7 f=1MHz 3 2 3 2 100 100 7 7 5 5 3 3 2 2 10 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Colletcor Current, Ic (A) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 10 5 7 1.0 2 3 5 7 10 2 3 5 7 100 Colletcor to Base Voltage, VCB (V) 5 of 6 QW-R209-014.H 2SD1803 NPN SILICON TRANSISTOR TYPICAL CHARACTERICS(Cont.) Base to Emitter Saturation Voltage, VBE(sat) (V) C O pe t ra io nT 25 c= C 25 a= nT tio ra pe O C Power Dissipation, PD (W) D C D Collector Current, IC (A) Collector to Emitter Saturation Voltage, VCE(sat) (mV)  UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R209-014.H