2SD1803G-X-TN3-R

UNISONIC TECHNOLOGIES CO., LTD 2SD1803 HIGH CURRENT SWITCHING APPLICATION DESCRIPTION The UTC 2SD1803 applies to relay drivers, high-speed inverters, converters, and other general high-current switching applications. NPN SILICON TRANSISTOR FEATURES *Low Collector-To-Emitter Saturation Voltage. *High Current And High fT. *Excellent Linearity Of hFE. *Fast Switching Time. ORDERING INFORMATION Ordering Number Normal Lead Free Plating Halogen Free 2SD1803-x-TM3-T 2SD1803L-x-TM3-T 2SD1803G-x-TM3-T 2SD1803-x-TN3-R 2SD1803L-x-TN3-R 2SD1803G-x-TN3-R 2SD1803-x-TN3-T 2SD1803L-x-TN3-T 2SD1803G-x-TN3-T Package TO-251 TO-252 TO-252 Pin Assignment 1 2 3 B C E B C E B C E Packing Tube Tape Reel Tube www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 5 QW-R209-014,E 2SD1803 PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation DC PULSE TA=25°C TC=25°C SYMBOL VCBO VCEO VEBO IC ICM PD NPN SILICON TRANSISTOR ABSOLUATE MAXIUM RATINGS (TA = 25°C, unless otherwise specified) RATINGS 60 50 6 5 8 1 20 +150 UNIT V V V A W °C Junction Temperature TJ °C Storage Temperature TSTG -40 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified.) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain C-E Saturation Voltage B-E Saturation Voltage Gain-Bandwidth Product Output Capacitance Turn-on Time Storage Time Fall Time SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(SAT) VBE(SAT) fT Cob tON tS tF TEST CONDITIONS IC=10μA, IE=0 IC=1mA, RBE=∞ IE=10μA, IC=0 VCB=40V, IE=0 VEB=4V, IC=0 VCE=2V, IC=0.5A VCE=2V, IC=4A IC=3A, IB=0.15A IC=3A, IB=0.15A VCE=5V, Ic=1A VCB=10V, f=1MHz See Test Circuit See Test Circuit See Test Circuit MIN 60 50 6 TYP MAX UNIT V V V μA μA 70 35 220 0.95 180 40 50 500 20 1 1 400 400 1.3 mV V MHz pF ns ns ns CLASSIFICATION OF hFE1 RANK RANGE Q 70 ~ 140 R 100 ~ 200 S 140 ~ 280 T 200 ~ 400 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R209-014,E 2SD1803 TEST CIRCUIT IB 1 INPUT RB IB 2 50 VR + 100μ PW=20μS Duty Cycle≦1% -5V NPN SILICON TRANSISTOR OUTPUT RL + 470μ 25V Ic=10IB1=-10IB2=2A (Unit : (resistance : Ω, capacitance : F)) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R209-014,E 2SD1803 ■ NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS Ic -VCE 5 30mA 4 35mA 40mA 50mA 45mA 4 20mA 15mA 2 10mA 5mA IB=0 0 0.4 0.8 1.2 1.6 2.0 2 25mA 5 30mA Ic -VCE 25mA 20mA 3 3 15mA 10mA 5mA 1 0 1 0 0 2 4 6 IB=0 8 10 Collector to Emitter Voltage, VCE (V) Ic -VBE 6 5 4 3 2 1 0 VCE=2V 1000 7 5 3 2 100 7 5 3 Ta=-25 C 2 10 5 7 0.01 Collector to Emitter Voltage, VCE (V) hFE -I c C VCE=2V Ta=75 C Ta=75 C Ta=25 C Ta=25 C Ta=-25 C 0 0.2 0.4 0.6 0.8 1.0 1.2 23 57 0.1 2 3 5 71.0 2 3 5 7 10 Base to Emitter Voltage, VBE (V) Collector Current, IC (A) fT -I c 1000 7 5 VCE=5V 3 2 3 2 100 7 5 3 2 10 2 3 5 7 0.1 23 57 1.0 23 57 10 100 7 5 3 2 10 5 7 1.0 2 3 Cob -VcB f=1MHz 5 7 10 2 3 5 7 100 Colletcor Current, Ic (A) Colletcor to Base Voltage, VCB (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R209-014,E 2SD1803 TYPICAL CHARACTERICS(Cont.) NPN SILICON TRANSISTOR Collector to Emitter Saturation Voltage, VCE(sat) (mV) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Power Dissipation, PD (W) Collector Current, IC (A) Base to Emitter Saturation Voltage, VBE(sat) (V) D C O pe t ra C D 25 a= nT tio ra pe O C io nT 25 c= C 5 of 5 QW-R209-014,E