2SD1804-Q-TM3-R

UNISONIC TECHNOLOGIES CO., LTD 2SD1804 HIGH CURRENT SWITCHING APPLICATIONS FEATURES * Low collector-to-emitter saturation voltage * High current and high fT * Excellent linerarity of hFE. * Fast switching time * Small and slim package making it easy to make UTC 2SD1804 applied sets smaller. NPN SILICON TRANSISTOR 1 TO-251 1 TO-252 *Pb-free plating product number: 2SD1804L ORDERING INFORMATION Order Number Normal Lead Free Plating 2SD1804-x-TM3-T 2SD1804L-x-TM3-T 2SD1804-x-TN3-R 2SD1804L-x-TN3-R 2SD1804-x-TN3-T 2SD1804L-x-TN3-T Package TO-251 TO-252 TO-252 Pin Assignment 1 2 3 B C E B C E B C E Packing Tube Tape Reel Tube 2SD1804L-x-TM3-T (1)Packing Type (2)Package Type (3)Rank (4)Lead Plating (1) R: Tape Reel, T: Tube (2) TM3: TO-251, TN3: TO-252 (3) x: refer to Classification of hFE1 (4) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 5 QW-R209-006,C 2SD1804 PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified) SYMBOL RATINGS UNIT VCBO 60 V VCEO 50 V VEBO 6 V PD 1 W Collector Dissipation Tc=25℃ 20 W Collector Current IC 8 A Collector Current(PULSE) IC(PULSE) 12 A Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55~+150 ℃ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Storage Time Fall Time SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 fT Cob VCE(SAT) VBE(SAT) tSTG tF TEST CONDITIONS IC=10µA, IE=0 IC=1mA, RBE=∞ IE=10µA, IC=0 VCB=40V, IE=0 VEB=4V, IC=0 VCE=2V, IC=0.5A VCE=2V, IC=6A VCE=5V, IC=1A VCE=10V, f=1MHz IC=4A, IB=0.2A IC=4A, IB=0.2A See test circuit See test circuit MIN 60 50 6 TYP MAX UNIT V V V 1 µA 1 µA 400 MHz pF mV V ns ns 70 35 180 65 200 0.95 500 20 400 1.3 CLASSIFICATION OF hFE1 RANK RANGE Q 70-140 R 100-200 S 140-280 T 200-400 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R209-006,C 2SD1804 TEST CIRCUIT NPN SILICON TRANSISTOR PW=20uS Duty Cycle≤1% INPUT IB1 RB IB2 50 VR + 100u -5V I C=10 IB 1= -10 I B2=4A Unit(resistance: Ω, capacitance: F) + 470u 25V RL OUTPUT UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R209-006,C 2SD1804 TYPICAL CHARACTERISTICS Collector to Emitter Voltage, VCE (V) 10 70mA Colletcor Current, IC -A 8 100mA 6 5 0mA 40mA NPN SILICON TRANSISTOR Collector to Emitter Voltage, VCE (V) 5 3 0mA 60mA Colletcor Current, IC -A 4 80mA 90mA 25mA 20mA 15mA 10mA 3 4 30mA 20mA 2 2 0 0 0.4 0.8 1.2 IC - VCE 10mA IB=0 1.6 2.0 1 0 0 2 4 6 IC - VCE 5mA I B=0 8 10 Base to Emitter Voltage, VBE (V) 9 8 Colletcor Current, IC - A DC Current Gain, hFE Collector Current, I C (A) 1000 VCE=2V VCE=2V 7 6 5 4 3 Ta=25℃ 2 1 0 0 0.2 0.4 0.6 I C - VBE 0.8 1.0 1.2 Ta=-25℃ Ta=75℃ 7 5 3 2 100 7 5 3 2 Ta=75℃ Ta=25℃ Ta=-25℃ 10 2 3 57 0.01 0.1 23 57 hFE - IC 1.0 2 3 5 7 10 2 Colletcor Current, IC (A) 5 Gain-Bandwidth Product, fT -MHz Output Capacitance, Cob-pF Colletcor to Base Voltage, VCB (V) 5 VCE=5V 3 2 100 7 5 3 2 f=1MHz 3 2 100 7 5 3 2 10 2 3 5 7 0.1 2 3 5 7 1.0 fT - IC 2 3 5 7 10 10 5 7 1.0 23 5 7 10 Cob - VCB 23 5 7 100 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R209-006,C 2SD1804 TYPICAL CHARACTERISTICS(Cont.) Collector Current, IC (A) Collector to Emitter Saturation Voltage, VCE(SAT) - mV NPN SILICON TRANSISTOR Collector Current IC (A) , I C/IB=20 Base to Emitter Saturation Voltage, VBE(SAT) -V 1000 7 5 3 2 100 7 5 3 2 Ta=75℃ 10 7 5 3 2 1.0 7 5 Ta=-25℃ I c/IB =20 Ta=25℃ Ta=-25℃ 2 3 5 710 10 5 70.01 2 3 5 70.1 2 3 5 71.0 VCE(SAT) - I C Ta=25℃ Ta=75℃ 3 2 2 3 5 7 1.0 2 3 5 7 10 5 70.01 2 3 5 7 0.1 VBE(SAT) - I C Colletcor to Emitter Voltage, VCE (V) 2 10 7 5 3 2 1.0 7 5 3 2 Icp IC DC Ambient Temperature, Ta (℃) 24 1ms Collector Dissipation, PC - W 10ms Collector Current, IC - A 20 16 12 8 4 No heat sink 1 00 160 20 40 60 80 PD -Ta 100 120 140 e Op n t io ra 100ms 0.1 7 5 3 TC=25℃, One Pulse For 2 PNP,minus sign is omitted. 0.01 0.1 2 3 5 71.0 2 3 5 7 10 2 3 5 7100 ASO 5℃ UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw DC O ra pe tio n =2 TC 5℃ =2 Ta 5 of 5 QW-R209-006,C