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2SD1804L-X-TM3-T

2SD1804L-X-TM3-T

  • 厂商:

    UTC(友顺)

  • 封装:

  • 描述:

    2SD1804L-X-TM3-T - HIGH CURRENT SWITCHING APPLICATION - Unisonic Technologies

  • 详情介绍
  • 数据手册
  • 价格&库存
2SD1804L-X-TM3-T 数据手册
UNISONIC TECHNOLOGIES CO., LTD 2SD1804 HIGH CURRENT SWITCHING APPLICATIONS FEATURES * Low collector-to-emitter saturation voltage * High current and high fT * Excellent linerarity of hFE. * Fast switching time * Small and slim package making it easy to make UTC 2SD1804 applied sets smaller. NPN SILICON TRANSISTOR Lead-free: 2SD1804L Halogen-free:2SD1804G ORDERING INFORMATION Normal 2SD1804-x-TM3-T 2SD1804-x-TN3-R Ordering Number Lead Free Halogen Free 2SD1804L-x-TM3-T 2SD1804G-x-TM3-T 2SD1804L-x-TN3-R 2SD1804G-x-TN3-R Package TO-251 TO-252 Pin Assignment 1 2 3 B C E B C E Packing Tube Tape Reel www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd 1 of 5 QW-R209-006,D 2SD1804 PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage SYMBOL VCBO VCEO VEBO NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified) RATINGS UNIT 60 V 50 V 6 V Ta=25°C 1 W PD Collector Dissipation TC=25°C 20 W Collector Current IC 8 A Collector Current(PULSE) IC(PULSE) 12 A Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Storage Time Fall Time SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 fT Cob VCE(SAT) VBE(SAT) tSTG tF TEST CONDITIONS IC=10μA, IE=0 IC=1mA, RBE=∞ IE=10μA, IC=0 VCB=40V, IE=0 VEB=4V, IC=0 VCE=2V, IC=0.5A VCE=2V, IC=6A VCE=5V, IC=1A VCE=10V, f=1MHz IC=4A, IB=0.2A IC=4A, IB=0.2A See test circuit See test circuit MIN 60 50 6 TYP MAX UNIT V V V 1 μA 1 μA 400 MHz pF mV V ns ns 70 35 180 65 200 0.95 500 20 400 1.3 CLASSIFICATION OF hFE1 RANK RANGE Q 70-140 R 100-200 S 140-280 T 200-400 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R209-006,D 2SD1804 TEST CIRCUIT NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R209-006,D 2SD1804 Gain-Bandwidth Product, fT -MHz Colletcor Current, IC - A Colletcor Current, IC -A TYPICAL CHARACTERISTICS UNISONIC TECHNOLOGIES CO., LTD DC Current Gain, hFE Colletcor Current, IC -A www.unisonic.com.tw Output Capacitance, Cob-pF NPN SILICON TRANSISTOR QW-R209-006,D 4 of 5 2SD1804 TYPICAL CHARACTERISTICS(Cont.) Collector Current, IC (A) Collector to Emitter Saturation Voltage, VCE(SAT) - mV 1000 7 5 3 2 100 7 5 3 2 Ta=25℃ Ta=-25℃ 2 3 5 710 Ta=75℃ IC/IB=20 Base to Emitter Saturation Voltage, VBE(SAT) -V 10 7 5 3 2 1.0 7 NPN SILICON TRANSISTOR Collector Current, IC (A) Ic/IB=20 Ta=-25℃ 10 5 70.01 2 3 5 70.1 2 3 5 71.0 VCE(SAT) - IC Ta=25℃ Ta=75℃ 3 2 2 3 5 7 1.0 2 3 5 7 10 5 70.01 2 3 5 7 0.1 VBE(SAT) - IC 5 Colletcor to Emitter Voltage, VCE (V) 2 10 7 5 3 2 1.0 7 5 3 2 Icp IC D Ambient Temperature, Ta (℃) 24 Collector Dissipation, PC - W 1ms 20 16 12 8 4 1 00 10ms C Collector Current, IC - A 100ms O pe n tio ra 0.1 7 5 3 TC=25℃, One Pulse For 2 PNP,minus sign is omitted. 0.01 0.1 2 3 5 71.0 2 3 5 7 10 2 3 5 7100 ASO =2 5℃ UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw D C O r pe io at Ta n =2 TC 5℃ No heat sink 160 20 40 60 80 PD -Ta 100 120 140 5 of 5 QW-R209-006,D
2SD1804L-X-TM3-T
物料型号: - 2SD1804-x-TM3-T(TO-251封装) - 2SD1804-x-TN3-R(TO-252封装) - 2SD1804L-x-TM3-T(无铅,TO-251封装) - 2SD1804L-x-TN3-R(无铅,TO-252封装) - 2SD1804G-x-TM3-T(无卤素,TO-251封装) - 2SD1804G-x-TN3-R(无卤素,TO-252封装)

器件简介: 2SD1804是一款NPN硅晶体管,适用于高电流开关应用。它具有低集电极-发射极饱和电压、高电流和高fT、出色的hFE线性、快速开关时间和小巧的封装。

引脚分配: - TO-251封装:B(基极)、C(集电极)、E(发射极) - TO-252封装:B(基极)、C(集电极)、E(发射极)

参数特性: - 集电极-基极电压(VCBO):60V - 集电极-发射极电压(VCEO):50V - 发射极-基极电压(VEBO):6V - 集电极耗散功率(PD):1W(Tc=25°C时) - 集电极电流(Ic):8A - 集电极电流(脉冲):12A - 结温(TJ):+150°C - 存储温度(TSTG):-55~+150°C

功能详解: - 直流电流增益(hFE1):VcE=2V, Ic=0.5A时为70至400 - 直流电流增益(hFE2):VcE=2V, Ic=6A时为35至400 - 增益-带宽积(fT):VcE=5V, Ic=1A时为180MHz - 输出电容(Cob):VcE=10V, f=1MHz时为65pF - 集电极-发射极饱和电压(VCE(SAT)):Ic=4A, IB=0.2A时为200至400mV - 基极-发射极饱和电压(VBE(SAT)):Ic=4A, IB=0.2A时为0.95至1.3V

应用信息: 2SD1804适用于高电流开关应用,其小而薄的封装有助于减小应用设备的体积。

封装信息: - TO-251和TO-252封装,提供有铅、无铅和无卤素版本。
2SD1804L-X-TM3-T 价格&库存

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2SD1804L-T-TN3-R
  •  国内价格
  • 5+1.18883
  • 50+0.95997
  • 500+0.73948
  • 1000+0.72839

库存:576