2SD1816G-X-TN3-R

UNISONIC TECHNOLOGIES CO., LTD 2SD1816 HIGH CURRENT SWITCHIG APPLICATIONS FEATURES * Low collector-to-emitter saturation voltage * Good linearity of hFE * Small and slim package facilitating compactness of sets. * High fT * Fast switching speed NPN PLANAR TRANSISTOR ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SD1816L-x-TF3-T 2SD1816G-x-TF3-T 2SD1816L-x-TM3-T 2SD1816G-x-TM3-T 2SD1816L-x-TN3-T 2SD1816G-x-TN3-T 2SD1816L-x-TN3-R 2SD1816G-x-TN3-R Package TO-220F TO-251 TO-252 TO-252 Pin Assignment 1 2 3 B C E B C E B C E B C E Packing Tube Tube Tube Tape Reel www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 of 5 QW-R209-011,C 2SD1816 ABSOLUTE MAXIMUM RATINGS (Ta =25℃ ) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation DC PULSE(Note 1) TO-251/TO-252 TO-220F SYMBOL VCBO VCEO VEBO IC PD NPN PLANAR TRANSISTOR Junction Temperature TJ Storage Temperature TSTG Note1: Duty=1/2, Pw=20ms Note2: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. RATINGS 120 100 6 4 8 1 2 +150 -40 ~ +150 UNIT V V V A A W W °C °C ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER Collector Base Breakdown Voltage Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Transfer Ratio Transition Frequency Output Capacitance Turn-on Time Storage Time Fall Time SYMBOL BVCBO BVCEO BVEBO VBE(SAT) VCE(SAT) ICBO IEBO hFE1 hFE2 fT Cob tON tSTG tF TEST CONDITIONS IC =10μA, IE =0 IC =1mA, RB=∞ IE =10μA, IC=0 IC = 2A, IB =0.2A IC = 2A, IB=0.2A VCB = 100 V, IE =0 VEB = 4V, IC=0 VCE = 5V, IC = 0.5A VCE =5V, IC = 3A VCE =10V, IC =0.5A VCB =10V, IE =0A, f =1MHz See test circuit See test circuit See test circuit MIN 120 100 6 TYP MAX UNIT V V V 1.2 V 400 mV 1 μA 1 μA 400 MHz pF ns ns ns 0.9 150 70 40 180 40 100 900 50 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R209-011,C 2SD1816 CLASSIFICATION of hFE1 RANK RANGE R 100 - 200 S 140 - 280 NPN PLANAR TRANSISTOR T 200 - 400 Q 70 -140 TEST CIRCUIT PW=20μS Duty Cycle≒1% INPUT I B1 RB I B2 50 VR + 100µ -5V Ic=10, IB1= -10, IB2=2A Unit (resistance:Ω, capacitance: F) + 470µ 50V OUTPUT UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R209-011,C 2SD1816 TYPICAL CHARACTERISTICS NPN PLANAR TRANSISTOR Colletcor Current, Ic (A) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Colletcor Current, Ic (A) 4 of 5 QW-R209-011,C 2SD1816 TYPICAL CHARACTERISTICS(Cont.) NPN PLANAR TRANSISTOR Collector to Emitter Saturation Voltage, VCE(SAT) (mV) 25 DC (T Op a= 25 erat ion ) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Collector Dissipation, PD (W) Collector Current, IC (A) Base to Emitter Saturation Voltage, VBE(SAT) (V) DC e Op n tio ra c= (T 25 ) 5 of 5 QW-R209-011,C