2SD1816L-S-TN3-R

UNISONIC TECHNOLOGIES CO., LTD 2SD1816 NPN PLANAR TRANSISTOR HIGH CURRENT SWITCHIG APPLICATIONS  FEATURES * Low collector-to-emitter saturation voltage * Good linearity of hFE * Small and slim package facilitating compactness of sets. * High fT * Fast switching speed  ORDERING INFORMATION Ordering Number Lead Free 2SD1816L-x-TF3-T 2SD1816L-x-TM3-T 2SD1816L-x-TMS-R 2SD1816L-x-TN3-R Note: Pin assignment: B: Base  Halogen Free 2SD1816G-x-TF3-T 2SD1816G-x-TM3-T 2SD1816G-x-TMS-R 2SD1816G-x-TN3-R C: Collector E: Emitter Package TO-220F TO-251 TO-251S TO-252 Pin Assignment 1 2 3 B C E B C E B C E B C E Packing Tube Tube Tape Reel Tape Reel MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 5 QW-R209-011.F 2SD1816  NPN PLANAR TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation SYMBOL VCBO VCEO VEBO DC PULSE(Note 1) TO-251/TO-252 TO-220F IC PD RATINGS 120 100 6 4 8 1 2 +150 -40 ~ +150 UNIT V V V A A W W C C Junction Temperature TJ Storage Temperature TSTG Note: 1.Duty=1/2, Pw=20ms 2. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collector Base Breakdown Voltage Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Transfer Ratio Transition Frequency Output Capacitance Turn-on Time Storage Time Fall Time  SYMBOL BVCBO BVCEO BVEBO VBE(SAT) VCE(SAT) ICBO IEBO hFE1 hFE2 fT Cob tON tSTG tF TEST CONDITIONS IC =10μA, IE =0 IC =1mA, RB=∞ IE =10μA, IC=0 IC = 2A, IB =0.2A IC = 2A, IB=0.2A VCB = 100 V, IE =0 VEB = 4V, IC=0 VCE = 5V, IC = 0.5A VCE =5V, IC = 3A VCE =10V, IC =0.5A VCB =10V, IE =0A, f =1MHz See test circuit See test circuit See test circuit MIN 120 100 6 TYP 0.9 150 70 40 MAX UNIT V V V 1.2 V 400 mV 1 μA 1 μA 400 180 40 100 900 50 MHz pF ns ns ns CLASSIFICATION of hFE1 RANK RANGE R 100 - 200 S 140 - 280 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw T 200 - 400 Q 70 -140 2 of 5 QW-R209-011.F 2SD1816  NPN PLANAR TRANSISTOR TEST CIRCUIT PW=20μS Duty Cycle≒1% I B1 INPUT RB OUTPUT I B2 50 VR + 100µ + 470µ -5V 50V Ic=10, IB1= -10, IB2=2A Unit (resistance:Ω, capacitance: F) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R209-011.F 2SD1816 TYPICAL CHARACTERISTICS Colletcor Current, Ic (A) Colletcor Current, Ic (A)  NPN PLANAR TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R209-011.F 2SD1816 Base to Emitter Saturation Voltage, VBE(SAT) (V) 25 DC DC (T Op a= 25 erat ion ) e Op n tio ra c= (T 25 ) Collector Dissipation, PD (W) Collector to Emitter Saturation Voltage, VCE(SAT) (mV) TYPICAL CHARACTERISTICS(Cont.) Collector Current, IC (A)  NPN PLANAR TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R209-011.F