2SD1857L-P-T9N-R

厂商：
UTC(友顺)
封装：
描述：
2SD1857L-P-T9N-R - POWER TRANSISTOR - Unisonic Technologies

数据手册：

下载2SD1857L-P-T9N-R.pdf

立即购买

详情介绍
数据手册
价格&库存

2SD1857L-P-T9N-R 数据手册

UNISONIC TECHNOLOGIES CO., LTD 2SD1857 POWER TRANSISTOR FEATURES * High breakdown voltage.(BVCEO=120V) * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) NPN SILICON TRANSISTOR 1 TO-92 1 TO-92NL *Pb-free plating product number: 2SD1857L ORDERING INFORMATION Order Number Normal Lead Free Plating 2SD1857-x-T92-B 2SD1857L-x-T92-B 2SD1857-x-T92-K 2SD1857L-x-T92-K 2SD1857-x-T9N-B 2SD1857L-x-T9N-B 2SD1857-x-T9N-K 2SD1857L-x-T9N-K 2SD1857-x-T9N-R 2SD1857L-x-T9N-R Package TO-92 TO-92 TO-92NL TO-92NL TO-92NL Pin Assignment 1 2 3 E C B E C B E C B E C B E C B Packing Tape Box Bulk Tape Box Bulk Tape Reel 2SD1857L-x-T92-B (1)Packing Type (2)Package Type (3)Rank (4)Lead Plating (1) B: Tape Box, K: Bulk, R: Tape Reel (2) T92: TO-92, T9N: TO-92NL (3) x: refer to Classification of hFE (4) L: Lead Free Plating, Blank: Pb/Sn 12www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 2 QW-R201-057,C 2SD1857 ABSOLUTE MAXIMUM RATING (Ta=25℃) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Power Dissipation Collector Current Collector Current SYMBOL VCBO VCEO VEBO PC IC ICP NPN SILICON TRANSISTOR RATINGS 120 120 5 1 2 3 UNIT V V V W A A Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25℃) PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage BVCBO IC=50µA Collector-Emitter Breakdown Voltage BVCEO IC=1mA Emitter-Base Breakdown Voltage BVEBO IE=50µA Collector Cut-off Current ICBO VCB=100V Emitter Cut-off Current IEBO VEB=4V DC Current Transfer Ratio hFE VCE=5V, IC=0.1A Collector-Emitter Saturation Voltage VCE(SAT) IC=/IB=1A/0.1A(Note) Transition Frequency fT VCE=5V, IE= -0.1A, f=30MHz. Output Capacitance Cob VCB=10V, IE=0A, f=1MHz(Note) Note: Measured using pulse current. MIN 120 120 5 TYP MAX UNIT V V V µA µA V MHz pF 82 80 20 1 1 390 0.4 CLASSIFICATION OF hFE RANK RANGE P 82-180 Q 120-270 R 180-390 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 2 QW-R201-057,C

下载 PDF

2SD1857L-P-T9N-R

物料型号： - 2SD1857（普通铅锡镀层） - 2SD1857L（无铅镀层）

器件简介： 2SD1857是一款NPN硅晶体管，具有高击穿电压（BVCEO=120V）、低集电极输出电容（典型值为20pF，在VCB=10V时）和高转换频率（fT=80MHz）。

引脚分配： | 封装类型 | 引脚1 | 引脚2 | 引脚3 | | --- | --- | --- | --- | | TO-92 | E（发射极） | C（集电极） | B（基极） | | TO-92NL | E（发射极） | C（集电极） | B（基极） |

参数特性： - 集电极-基极击穿电压（BVCBO）：最小120V - 集电极-发射极击穿电压（BVCEO）：最小120V - 发射极-基极击穿电压（BVEBO）：5V - 集电极截止电流（ICBO）：在VCB=100V时为1µA - 发射极截止电流（IEBO）：在VEB=4V时为1µA - DC电流传输比（hFE）：82至390 - 集电极-发射极饱和电压（VCE(SAT)）：在IC=1A/IB=0.1A时为0.4V - 转换频率（fT）：在VCE=5V，IE=-0.1A时为80MHz - 输出电容（Cob）：在VCB=10V，IE=0A，f=1MHz时为20pF

功能详解： 2SD1857晶体管适用于需要高电压、低电容和高频率的应用场景，如放大器和开关电路。

应用信息：适用于一般工业和消费电子产品中的放大和开关应用。

封装信息： - TO-92和TO-92NL两种封装类型，均有通孔（T92）和表面贴装（T9N）版本。 - 包装类型包括胶带盒（B）、散装（K）和卷带（R）。

2SD1857L-P-T9N-R 价格&库存

-> 查询更多价格&库存

很抱歉，暂时无法提供与“2SD1857L-P-T9N-R”相匹配的价格&库存，您可以联系我们找货

免费人工找货

搜索历史

2SD1857L-P-T9N-R

相关技术文章