2SD1898G-Q-AB3-R

UNISONIC TECHNOLOGIES CO., LTD 2SD1898 NPN SILICON TRANSISTOR POWER TRANSISTOR  FEATURES *High VCEO= 80V *High IC= 1A (DC) *Good hFE linearity. *Low VCE(SAT) *Complements the 2SB1260.  ORDERING INFORMATION Ordering Number 2SD1898G-x-AA3-R 2SD1898G-x-AB3-R 2SD1898G-x-AE3-R Note: Pin Assignment: B: Base C: Collector  Package SOT-223 SOT-89 SOT-23 Pin Assignment 1 2 3 B C E B C E E B C Packing Tape Reel Tape Reel Tape Reel E: Emitter MARKING SOT-223 www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd SOT-89 SOT-23 1 of 3 QW-R208-030.F 2SD1898  NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(PULSE) (Note 2) RATING UNIT 100 V 80 V 5 V 1 A 2 A SOT-223 1000 mW Collector Power Dissipation (Note 3) SOT-89 PC 500 mW SOT-23 300 mW Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Duty = 1/2, PW = 200ms 3. When mounted on a 40×40×0.7 mm ceramic board.  ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collector Base Breakdown Voltage Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Transfer Ratio Collector-Emitter Saturation Voltage Transition Frequency Output Capacitance  SYMBOL VCBO VCEO VEBO IC ICP SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(SAT) fT COB TEST CONDITIONS IC= 50μA IC= 1mA IE=50μA VCB=80V, IE=0A VEB=4V , IC=0A VCE=3V, IC= 0.5A IC=500mA, IB= 20mA VCE=10V, IE= -50mA, f=100MHz VCB= 10V, IE= 0A, f=1MHz MIN 100 80 5 TYP 82 0.15 100 20 MAX 1 1 390 0.4 UNIT V V V μA μA V MHz pF CLASSIFICATION OF hFE RANK RANGE P 82-180 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Q 120-270 R 180-390 2 of 3 QW-R208-030.F 2SD1898 NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R208-030.F