2SD2136

UTC 2SD2136 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SD2136 is designed for power amplification FEATURES *High forward current transfer ratio hFE which has satisfactory linearity. *Low collector to emitter saturation voltage VCE(sat) *Allowing supply with the radial taping. 1 TO-126 1: BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Collector Dssipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Ic Icp Pc Tj Tstg RATING 60 60 6 3 5 1.5 150 -55 ~ +150 UNIT V V V A A W °C °C ELECTRICAL CHARACTERISTICS (Ta=25°C,unless otherwise specified) PARAMETER Collector-Emitter Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Transfer Ratio Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Fall time Turn on time Storage Time SYMBOL VCEO ICEO ICES IEBO hFE1* hFE2 VCE(sat) VBE fT tf ton tstg TEST CONDITIONS Ic=30mA ,IB=0 VCE=60V,IB=0 VCE=60V,VBE=0 VEB=6V,Ic=0 VCE=4V,Ic=1A VCE=4V,Ic=3A Ic=3A,IB=0.375A VCE=4V,Ic=3A VCE=5V,IE= -0.1A,f=200MHz Ic=1A, IB1=0.1A, IB2= -0.1A MIN 60 TYP MAX 300 200 1 250 1.2 1.8 UNIT V µA µA mA 40 10 220 0.4 0.5 2.5 V V MHz µS µS µS UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R204-011,A UTC 2SD2136 CLASSIFICATION OF hFE1 RANK RANGE NPN EPITAXIAL SILICON TRANSISTOR Q 70-150 P 40-90 R 120-250 ELECTRICAL CHARACTERISTICS CURVES 2.0 Pc-Ta without head sink Collector Current Ic (A) 5 4 IC-VCE Tc=25℃ 80mA 90mA I(tot) IB=100mA mA 50mA 40mA 30mA 20mA Collector Power Dissipation Pc(W) 1.6 1.2 0.8 0.4 0 0 I(tot) mA 70mA 3 60mA 2 1 0 0 10mA 12 10 6 2 4 8 Collector to Emitter Voltage VCE(V) VCE(sat)-Ic IC/IB=6 20 40 60 80 100 120 140 160 Ambient temperature Ta (℃) Collector to Emitter Saturation Voltage VCE(sat) (V) 8 7 IC-VBE VCE=4V Tc=25℃ I(tot) mA Tc=100℃ Tc=-25℃ 100 30 10 3 1 0.3 0.1 Collector Current Ic (A) 6 5 4 3 2 1 0 0 Tc=100℃ Tc=25℃ Tc=-25℃ 2.0 1.2 0.4 0.8 1.6 Base to Emitter Voltage VBE(V) 2.4 0.03 0.01 0.01 0.03 1 3 0.1 0.3 Collector Current Ic(A) 10 UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R204-011,A UTC 2SD2136 10000 Forward current transfer ratio hfe 3000 1000 300 100 Tc=-25℃ 30 10 3 1 0.01 0.03 Tc=100℃ NPN EPITAXIAL SILICON TRANSISTOR hFE-Ic VCE=4V Transtion Frequency fT ( MHz) 300 250 200 150 100 50 0 -0.01 -0.03 -1 -3 -0.1 -0.3 Collector Current Ic(A) -10 fT-Ic VCB=10V Tc=25℃ f=200MHz Tc=25℃ 1 3 0.1 0.3 Collector Current Ic(A) 10 Rth (t) ----t 104 Thermal resistnace Rth (t) (℃ /W) 103 102 10 1 10-1 10-4 without head sink 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 100 30 10 3 1 0.3 0.1 0.03 0.01 0.1 Area of safe operation (ASO) Single pulse Tc=25℃ Icp t=100ms Ic t=1s t=10ms Collector Current Ic (A) 3 10 30 1 0.3 Collector to Emitter Voltage V (V) CE 100 UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R204-011,A