2SD313G-X-TA3-T

2SD313G-X-TA3-T

  • 厂商:

    UTC(友顺)

  • 封装:

  • 描述:

    2SD313G-X-TA3-T - NPN EPITAXIAL PLANAR TRANSISTOR - Unisonic Technologies

  • 详情介绍
  • 数据手册
  • 价格&库存
2SD313G-X-TA3-T 数据手册
UNISONIC TECHNOLOGIES CO., LTD 2SD313 NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC 2SD313 is designed for use in general purpose amplifier and switching applications. NPN SILICON TRANSISTOR ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SD313L-x-TA3-T 2SD313G-x-TA3-T 2SD313L-x-TF3-T 2SD313G-x-TF3-T Package TO-220 TO-220F Pin Assignment 1 2 3 B C E B C E Packing Tube Tube www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 4 QW-R203-001,C 2SD313 ABSOLUTE MAXIMUM RATINGS NPN SILICON TRANSISTOR PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 5 V Collector Current IC 3 A Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS(Ta=25°C) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter On voltage DC Current Gain SYMBOL BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT) VBE(ON) hFE TEST CONDITIONS IC=1mA IC=10mA IE=100uA VCB=20V, IE=0 VEB=4V, IC=0 IC=2A, IB=0.2A VCE=2V, IC=1A IC=1A, VCE=2V IC=0.1A,VCE=2V MIN 60 60 5 TYP MAX UNIT V V V mA mA V V 40 40 0.1 1.0 1.0 1.5 320 CLASSIFICATION ON hFE RANK RANGE C 40-80 D 60-120 E 100-200 F 160-320 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R203-001,C 2SD313 TYPICAL CHARACTERISTICS NPN SILICON TRANSISTOR VBE(ON) (mV) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Collector Current (A) VBE(SAT) (mA) Saturation Voltage, VCE(SAT) (mV) h FE 3 of 4 QW-R203-001,C 2SD313 NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R203-001,C
2SD313G-X-TA3-T
### 物料型号 - 型号:2SD313 - 订购编号:2SD313L-x-TA3-T(无铅)、2SD313G-x-TA3-T(无卤素)、2SD313L-x-TF3-T(无铅)、2SD313G-x-TF3-T(无卤素)

### 器件简介 - UTC 2SD313是一个NPN硅外延平面晶体管,设计用于一般用途的放大和开关应用。

### 引脚分配 - TO-220封装:B(基极)、C(集电极)、E(发射极) - TO-220F封装:B(基极)、C(集电极)、E(发射极)

### 参数特性 - 绝对最大额定值: - 集-基电压:60V - 集-射电压:60V - 发-基电压:5V - 集电极电流:3A - 结温:+150°C - 存储温度:-55°C至+150°C

- 电性特性(Ta=25°C): - 集-基击穿电压:60V(Ic=1mA) - 集-射击穿电压:60V(Ic=10mA) - 发-基击穿电压:5V(Ie=100uA) - 集截止电流:0.1mA(VcB=20V, Ie=0) - 发截止电流:1.0mA(VeB=4V, Ic=0) - 集-射饱和电压:1.0V(Ic=2A, Ib=0.2A) - 基-发射开启电压:1.5V(Vce=2V, Ic=1A) - DC电流增益:hFE 40-320

### 功能详解 - 该晶体管适用于放大和开关应用,具有较高的集电极电流和电压承受能力。

### 应用信息 - UTC 2SD313不适用于生命支持设备、器具或系统中,其中这些产品的故障可能导致个人伤害。

### 封装信息 - 封装类型:TO-220和TO-220F - 封装材料:有铅(L)、无铅(G)、含卤素(TA3)、无卤素(TF3)
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