2SD313L-E-TA3-T

UNISONIC TECHNOLOGIES CO., LTD 2SD313 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR  DESCRIPTION The UTC 2SD313 is designed for use in general purpose amplifier and switching applications.  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SD313L-x-TA3-T 2SD313G-x-TA3-T 2SD313L-x-TF3-T 2SD313G-x-TF3-T 2SD313L-x-TQ2-T 2SD313G-x-TQ2-T 2SD313L-x-TQ2-R 2SD313G-x-TQ2-R Note: Pin assignment: E: Emitter B: Base C: Collector  Package TO-220 TO-220F TO-263 TO-263 Pin Assignment 1 2 3 B C E B C E B C E B C E Packing Tube Tube Tube Tape Reel MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 4 QW-R203-001.F 2SD313  NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25C, unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current RATINGS UNIT 60 V 60 V 5 V 3 A TO-220 1.75 Collector Dissipation TO-220F PC 1.6 W TO-263 1.73 Junction Temperature TJ +150 C Storage Temperature TSTG -55 ~ +150 C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  SYMBOL VCBO VCEO VEBO IC ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain hFE Collector-Emitter Saturation Voltage Base-Emitter On voltage Gain Band width Product  SYMBOL BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT) VBE(ON) fT TEST CONDITIONS IC=1mA IC=10mA IE=100uA VCB=20V, IE=0 VEB=4V, IC=0 IC=1A, VCE=2V IC=0.1A,VCE=2V IC=2A, IB=0.2A VCE=2V, IC=1A VCE= 5V, IC= 0.5A MIN 60 60 5 TYP MAX 0.1 1.0 320 40 40 1.0 1.5 8 UNIT V V V mA mA V V MHz CLASSIFICATION ON hFE RANK RANGE C 40-80 D 60-120 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw E 100-200 F 160-320 2 of 4 QW-R203-001.F 2SD313 NPN SILICON TRANSISTOR h FE Saturation Voltage, VCE(SAT) (mV) TYPICAL CHARACTERISTICS  VBE(SAT) vs. IC SOA 10000 10 Collector Current (A) VBE(SAT) (mA) IC=10IB 1000 100 20mS 1 dc 0.1 10 100 1000 10000 1 10 100 Collector to Emitter Voltage (V) VBE(ON) (mV) Collector Current (mA) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R203-001.F 2SD313 NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R203-001.F