2SD313L-X-TA3-T

UNISONIC TECHNOLOGIES CO., LTD 2SD313 NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC 2SD313 is designed for use in general purpose amplifier and switching applications. NPN SILICON TRANSISTOR 1 TO-220 *Pb-free plating product number:2SD313L ORDERING INFORMATION Order Number Normal Lead Free Plating 2SD313-x-TA3-T 2SD313L-x-TA3-T Package TO-220 Pin Assignment 1 2 3 B C E Packing Tube 2SD313L-x-TA3-T (1)Packing Type (2)Package Type (3)Rank (4)Lead Plating (1) T: Tube (2) TA3: TO-220 (3) x: refer to Classification of hFE (4) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R203-001,B 2SD313 ABSOLUTE MAXIMUM RATINGS NPN SILICON TRANSISTOR PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 5 V Collector Current IC 3 A Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS(Ta=25°C) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter On voltage DC Current Gain SYMBOL BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT) VBE(ON) hFE TEST CONDITIONS IC=1mA IC=10mA IE=100uA VCB=20V, IE=0 VEB=4V, IC=0 IC=2A, IB=0.2A VCE=2V, IC=1A IC=1A, VCE=2V IC=0.1A,VCE=2V MIN 60 60 5 TYP MAX UNIT V V V mA mA V V 40 40 0.1 1.0 1.0 1.5 320 CLASSIFICATION ON hFE RANK RANGE C 40-80 D 60-120 E 100-200 F 160-320 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R203-001,B 2SD313 TYPICAL CHARACTERISTICS DC Current Gain Saturation Voltage, VCE(SAT) (mV) NPN SILICON TRANSISTOR Saturation Voltage vs. Collector Current 10000 IC=10IB 1000 100 h FE 1000 10 100 1 10 100 1000 10000 Collector Current (mA) 10 10 100 1000 10000 Collector Current (mA) V BE(SAT) vs. IC 10000 I C=10IB 10 SOA 1000 Collector Current (A) 10 100 1000 10000 VBE(SAT) (mA) 1 100 Collector Current (mA) 0.1 1 10 Collector to Emitter Voltage (V) 100 VBE(ON) vs. IC 10000 VCE=2V VBE(ON) (mV) 1000 1 00 10 100 1000 10000 Collector Current (mA) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R203-001,B 2SD313 NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R203-001,B