2SD667G-T9N-K

UNISONIC TECHNOLOGIES CO., LTD 2SD667 SILICON NPN EPITAXIAL DESCRIPTION The UTC 2SD667 is a NPN epitaxial silicon transistor, which can be used as a low frequency power amplifier. NPN SILICON TRANSISTOR FEATURES * Low frequency power amplifier * Halogen Free ORDERING INFORMATION Ordering Number 2SD667G-T9N-B 2SD667G-T9N-K Package TO-92NL TO-92NL 1 E E Pin Assignment 2 C C 3 B B Packing Tape Box Bulk www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 4 QW-R211-019.A 2SD667 ABSOLUTE MAXIMUM RATINGS NPN SILICON TRANSISTOR PARAMETER SYMBOL RATINGS UNIT Collector to Base Voltage VCBO 120 V Collector to Emitter Voltage VCEO 100 V Emitter to Base Voltage VEBO 6 V Collector Current IC 1.0 A Collector Peak Current (Note2) ICP 2.0 A Collector Power Dissipation PC 0.9 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. PW≤10ms, Duty cycle≤20% ELECTRICAL CHARACTERISTICS PARAMETER Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Transfer Ratio Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(SAT) VBE(SAT) TEST CONDITIONS IC=100μA, IE=0 IC=10mA, RBE=∞ IE=100μA, IC=0 VCB=120V, IE=0 VEB=6V, IC=0 VCE=2V, IC=150mA VCE=5V, IC=1A IC=500mA, IB=50mA IC=500mA, IB=50mA MIN 120 100 6 TYP MAX UNIT V V V 500 nA 500 nA 330 0.5 1.1 V V 140 40 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R211-019.A 2SD667 TYPICAL CHARACTERISTICS NPN SILICON TRANSISTOR Collector Current, IC (μA) Collector Current, IC (mA) Emitter Current vs. Emitter-Base Voltage 120 Collector Current, IC (mA) 100 Emitter Current, IE (μA) 80 60 40 20 0 0 2 4 6 8 10 Emitter-Base Voltage, VEB (V) 12 180 160 140 120 100 80 60 40 20 0 0 Collector Current vs. CollectorEmitter Voltage IB=1090μA IB=890μA IB=690μA IB=490μA IB=290μA IB=90μA 1 2 3 4 5 6 7 Collector-Emitter Voltage, VCE (V) Collector Current, IC (mA) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Collector Current, IC (mA) 3 of 4 QW-R211-019.A 2SD667 TYPICAL CHARACTERISTICS Collector Current vs. CollectorEmitter Voltage NPN SILICON TRANSISTOR 1200 1000 IB=13.25mA 800 600 400 200 0 0 2 4 6 8 10 Collector-Emitter Voltage, VCE (V) IB=8.25mA IB=3.25mA UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R211-019.A