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2SD669L-D-T6C-T

2SD669L-D-T6C-T

  • 厂商:

    UTC(友顺)

  • 封装:

  • 描述:

    2SD669L-D-T6C-T - BIPOLAR POWER GENERAL PURPOSE TRANSISTOR - Unisonic Technologies

  • 详情介绍
  • 数据手册
  • 价格&库存
2SD669L-D-T6C-T 数据手册
UNISONIC TECHNOLOGIES CO., LTD 2SD669/A BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 1 SOT-223 NPN SILICON TRANSISTOR 1 SOT-89 APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A 1 TO-92 1 TO-92NL 1 TO-126C 1 TO-126 1 TO-251 1 TO-252 *Pb-free plating product number: 2SD669L/2SD669AL ORDERING INFORMATION Order Number Normal Lead Free Plating 2SD669-x-AA3-R 2SD669L-x-AA3-R 2SD669-x-AB3-R 2SD669L-x-AB3-R 2SD669-x-T60-K 2SD669L-x-T60-K 2SD669-x-T6C-R 2SD669L-x-T6C-R 2SD669-x-T92-B 2SD669L-x-T92-B 2SD669-x-T92-K 2SD669L-x-T92-K 2SD669-x-T9N-B 2SD669L-x-T9N-B 2SD669-x-T9N-K 2SD669L-x-T9N-K 2SD669-x-T9N-R 2SD669L-x-T9N-R 2SD669-x-TM3-T 2SD669L-x-TM3-T 2SD669-x-TN3-R 2SD669L-x-TN3-R 2SD669-x-TN3-T 2SD669L-x-TN3-T Package SOT-223 SOT-89 TO-126 TO-126C TO-92 TO-92 TO-92NL TO-92NL TO-92NL TO-251 TO-252 TO-252 Pin Assignment 1 2 3 B C E B C E E C B E C B E C B E C B E C B E C B E C B E C B B C E B C E Packing Tape Reel Tape Reel Bulk Bulk Tape Box Bulk Tape Box Bulk Tape Reel Tube Tape Reel Tube www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 5 QW-R204-005,E 2SD669/A ORDERING INFORMATION(Cont.) Order Number Normal Lead Free Plating 2SD669A-x-AA3-R 2SD669AL-x-AA3-R 2SD669A-x-AB3-R 2SD669AL-x-AB3-R 2SD669A-x-T60-K 2SD669AL-x-T60-K 2SD669A-x-T6C-R 2SD669AL-x-T6C-R 2SD669A-x-T92-B 2SD669AL-x-T92-B 2SD669A-x-T92-K 2SD669AL-x-T92-K 2SD669A-x-T9N-B 2SD669AL-x-T9N-B 2SD669A-x-T9N-K 2SD669AL-x-T9N-K 2SD669A-x-T9N-R 2SD669AL-x-T9N-R 2SD669A-x-TM3-T 2SD669AL-x-TM3-T 2SD669A-x-TN3-R 2SD669AL-x-TN3-R 2SD669A-x-TN3-T 2SD669AL-x-TN3-T Package SOT-223 SOT-89 TO-126 TO-126C TO-92 TO-92 TO-92NL TO-92NL TO-92NL TO-251 TO-252 TO-252 NPN SILICON TRANSISTOR Pin Assignment 1 2 3 B C E B C E E C B E C B E C B E C B E C B E C B E C B E C B B C E B C E Packing Tape Reel Tape Reel Bulk Bulk Tape Box Bulk Tape Box Bulk Tape Reel Tube Tape Reel Tube 2SD669L-x-AB3-R (1)Packing Type (2)Package Type (3)Rank (4)Lead Plating (1) K: Bulk, R: Tape Reel, T: Tube (2) AA3: SOT-223, AB3: SOT-89, T60: TO-126, T 6C: TO-126C, TM3: TO-251, TN3: TO-252, T 92:TO-92, T9N: TO-92NL (3) x: refer to Classification of hFE1 (4) L: Lead Free Plating, Blank: Pb/Sn UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R204-005,E 2SD669/A PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peak Current Collector Power Dissipation Collector Power Dissipation 2SD669 2SD669A SYMBOL VCBO VCEO VEBO IC lC(PEAK) SOT-223 TO-126 PD NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified) RATINGS 180 120 160 5 1.5 3 0.5 1 UNIT V V V A A W W Junction Temperature TJ +150 ℃ Storage Temperature TSTG -40 ~ +150 ℃ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified) PARAMETER Collector to Base Breakdown Voltage Collector to Emitter Breakdown 2SD669 Voltage 2SD669A Emitter to Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Current Gain Bandwidth Product Output Capacitance Note: Pulse test. SYMBOL TEST CONDITIONS BVCBO IC=1mA, IE=0 BVCEO BVEBO ICBO hFE1 hFE2 VCE(SAT) VBE fT Cob IC=10mA, RBE=∞ IE=1mA, IC=0 VCB=160V, IE=0 VCE=5V, IC=150mA (Note) VCE=5V, IC=500mA (Note) IC=600mA, IB=50mA (Note) VCE=5V, IC=150mA (Note) VCE=5V, IC=150mA (Note) VCB=10V, IE=0, f=1MHz MIN 180 120 160 5 60 30 TYP MAX UNIT V V V µA 10 320 1 1.5 140 14 V V MHz pF CLASSIFICATION OF hFE1 RANK RANGE B 60-120 C 100-200 D 160-320 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R204-005,E 2SD669/A TYPICAL CHARACTERISTICS DC Current Transfer Ratio vs. Collector Current 300 5℃ Ta=7 NPN SILICON TRANSISTOR Collector to Emitter Saturation Voltage vs. Collector Current 1.2 IC=10 IB DC Current Transfer Ratio, hFE 250 200 150 100 50 1 1 3 10 30 100 300 1,000 3,000 Collector Current, IC (mA) VCE=5V 25 -20 Collector to emitter saturation voltage, VCE(SAT) (V) 1.0 0.8 0.6 0.4 0.2 0 1 3 10 30 100 300 1,000 Collector Current, IC (mA) 5 =7 TC 1.2 Base to Emitter Saturation Voltage, VBE(SAT) (V) Base to Emitter Saturation Voltage vs. Collector Current IC=10IB TC ℃ =-20 240 Gain Bandwidth Product, fT (MHz) Gain Bandwidth Product vs. Collector Current VCE=5V Ta=25℃ 1.0 0.8 0.6 0.4 0.2 0 200 160 120 80 40 0 10 25 75 1 3 10 30 100 300 1,000 Collector Current, IC (mA) 30 100 300 1,000 Collector Current, IC (mA) Collector Output Capacitance vs. Collector to Base Voltage Area of Safe Operation Collector Output Capacitance, Cob (pF) 200 Collector Current, IC (A) 100 50 20 10 5 2 1 f=1MHz IE=0 3 (13.3V, 1.5A) 1.0 40V, 0.5A 0.3 0.1 0.03 0.01 1 DC Operation (TC=25℃) (120V, 0.04A) (160V, 0.02A) 2SD669 2SD669A 2 5 10 20 50 100 3 10 30 100 Collector to Base Voltage, VCB (V) Collector to Emitter Voltage, VCE (V) 4 of 5 QW-R204-005,E UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 25 -2 0 ℃ 300 2SD669/A TYPICAL CHARACTERISTICS(Cont.) Typical Transfer Characteristics 500 Collector Current, IC (mA) NPN SILICON TRANSISTOR 200 100 VCE=5V 20 10 5 2 1 0 Ta= 7 5℃ 50 0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage, VBE (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 25 -20 5 of 5 QW-R204-005,E
2SD669L-D-T6C-T
物料型号: - 2SD669/A - 2SD669L/2SD669AL(无铅镀层产品编号)

器件简介: - 2SD669/A是一款NPN硅晶体管,适用于低频功率放大器,可与UTC 2SB649/A组成互补对。

引脚分配: - SOT-223封装:1脚为B(基极),2脚为C(集电极),3脚为E(发射极)。 - SOT-89封装:1脚为B(基极),2脚为C(集电极),3脚为E(发射极)。 - TO-126封装:1脚为E(发射极),2脚为C(集电极),3脚为B(基极)。 - TO-126C封装:1脚为E(发射极),2脚为C(集电极),3脚为B(基极)。 - TO-92封装:1脚为E(发射极),2脚为C(集电极),3脚为B(基极)。 - TO-92NL封装:1脚为E(发射极),2脚为C(集电极),3脚为B(基极)。 - TO-251封装:1脚为E(发射极),2脚为C(集电极),3脚为B(基极)。 - TO-252封装:1脚为B(基极),2脚为C(集电极),3脚为E(发射极)。

参数特性: - 绝对最大额定值包括集-基电压(VCBO, VCEO)、集-射电压(2SD669为120V,2SD669A为160V)、发射-基电压(VEBO)为5V,集电极电流(Ic)为1.5A,集电极峰值电流(IC(PEAK))为3A等。 - 电气特性包括集-基击穿电压(BVcBO)、集-射击穿电压(BVCEO)、发射-基击穿电压(BVEBO)、集电极截止电流(IcBO)、直流电流增益(hFE1, hFE2)、集-射饱和电压(VCE(SAT))等。

功能详解: - 该晶体管主要用于低频功率放大,具有不同的封装类型和引脚配置,以适应不同的应用场景。

应用信息: - 2SD669/A晶体管可与UTC 2SB649/A组成互补对,用于低频功率放大器。

封装信息: - 提供了多种封装类型,包括SOT-223、SOT-89、TO-126、TO-126C、TO-92、TO-92NL、TO-251、TO-252等,以满足不同应用需求。
2SD669L-D-T6C-T 价格&库存

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