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2SD879_2

2SD879_2

  • 厂商:

    UTC(友顺)

  • 封装:

  • 描述:

    2SD879_2 - 1.5V, 3V STROBE APPLICATIONS - Unisonic Technologies

  • 数据手册
  • 价格&库存
2SD879_2 数据手册
UTC 2SD879 NPN EPITAXIAL SILICON TRANSISTOR 1.5V, 3V STROBE APPLICATIONS DESCRIPTION The UTC 2SD879 is a NPN epitaxial silicon transistor, designed for 1.5V and 3V strobe applications. FEATURES *In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used. *The charge time is approximately 1 second faster than that of germanium transistors. *Less power dissipation because of lwo Collector-to-Emitter Voltage VCE(sat), permitting more flashes of light to be emitted. *Large current capacity and highly resistant to break-down. *Excellent linearity of hFE in the region from low current to high current. 1 TO-92 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETER SYMBOL VCBO VCEX VCEO VEBO PD Ic Icp Tj TSTG VALUE 30 20 10 6 1 3 5 150 -55 ~ +150 UNIT V V V V W A A °C °C Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation Collector Current(DC) Collector Current(PULSE) Junction Temperature Storage Temperature Note: PULSE CONDITION -> 100 ms single pulse ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Base-Emitter Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Pulse: 1mS SYMBOL VCBO VCEX VCEO VEBO VBE ICBO IEBO hFE VCE(sat) fT Cob TEST CONDITIONS IC=10uA, IE=0 IC=1mA, VBE=3V IC=1mA, RBE=∞ IE=10uA, IC=0 VCE=-1V,IC=-2A VCB=20V,IE=0 VEB=4V,Ic=0 VCE=2V, Ic=3A (pulse) Ic=3A,IB=60mA (pulse) VCE=10V, Ic=50mA VCB=10V,f=1MHz MIN 30 20 10 6 TYP MAX UNIT V V V V V µA µA V MHz pF 0.83 140 210 0.3 200 30 1.5 1 1 400 0.4 UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R201-043,A UTC 2SD879 NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R201-043,A UTC 2SD879 NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R201-043,A
2SD879_2 价格&库存

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