UTC 2SD880
NPN EPITAXIAL PLANAR TRANSISTOR
NPN EPITAXIAL TRANSISTOR
DESCRIPTION
The UTC 2SD880 is designed for audio frequency power amplifier applications.
FEATURE
*High DC Current Gain: hFE=300(Max.)(VCE=5V,IC=0.5A) *Low Saturation Voltage: VCE(sat)=1.0V(Max.)(IC=3A,IB=0.3A) *High Power Dissipation: PC=30W (Ta=25°C) *Complementary to 2SB834
1
TO-220
1:BASE 2:COLLECTOR 3:EMITTER
*Pb-free plating product number: 2SD880L
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
Maximum Voltages and currents Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Base Current Maximum Power Dissipation Total Power Dissipation Maximum Temperature Junction Temperature Range Storage Temperature Range
SYMBOL
VCBO VCEO VEBO IC IB PD TOPR TSTG
VALUE
60 60 7 3 0.5 30 150 -55 ~ +150
UNIT
V V V A A W °C °C
ELECTRICAL CHARACTERISTICS(Ta=25°C)
PARAMETER
Collector-Emitter Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Current gain bandwidth product
SYMBOL
BVCEO ICBO IEBO VCE(SAT) VBE(ON) hFE fT
TEST CONDITIONS
IC=50mA,IE=0 VCB=60V,IE=0 VEB=7V,IC=0 IC=3A, IB=300mA VCE=5V, IC=500mA IC=500mA, VCE=5V VCE =5V, IC =500mA
MIN.
60
TYP.
MAX.
100 100 1 1 300
UNIT
V µA µA V V MHZ
60 3
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R203-013,B
UTC 2SD880
CLASSIFICATION of hFE
RANK RANGE
NPN EPITAXIAL PLANAR TRANSISTOR
O 60-120 Y 100-200 GR 150-300
TYPICAL CHARACTERISTICS
Ic-Vce POWER DERATING
POWER DISSIPATION, P D (WATTS)
3.0
(A)
40 35 30 25 20 15 10 5 0 0 25 50 75 100 125 150 0 2.5 2.0 1.5
C
90 80
70
60 50 40 30 20
COLLECTOR CURRENT, I
IB = 10mA 1.0 0.5 TC = 25℃ 1.0 2.0 3.0 4.0 COLLECTOR-EMITTER VOLTAGE, V 5.0 CE (V) 6.0
TEMPERATURE, T C (℃)
DC CURRENT GAIN 300 TC = 100℃
DC CURRENT CAIN, h FE
Ic-Vbe VCE = 5.0V
COLLECTOR CURRENT, I C (A)
3.0 2.5 2.0 1.5 1.0 0.5 TC = 100℃ 25 -25
VCE = 5.0V
100
25
50 30
-25
10 2
5
10
20
50
100
200
500
1k
3k
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
COLLECTOR CURRENT, I C (mA)
BASE-EMITTER VOLTAGE, V BE (V)
VCE(sat)-IC COMMON EMITTER 0.5 IC/IB = 10
VOLTAGE, V (VOLTS)
ACTIVE-REGION SAFE OPERATING AREA (SOA) 10
COLLECTOR CURRENT, I C (Amp)
1.0
100ms 10ms 1ms dc
5.0
2.0 1.0 0.5
0.2 TC = 100℃ 0.1
0.05 -25℃ 0.02 2 5 10 20 50
25℃
Bonding Wire Limit Second Breakdown Limit Thermally Limited at TC = 25℃ (Single Pulse)
0.2 0.1 1.0
100 200
500
1k
2k
3k
2.0
5.0 7.0
10
20
50 70 100
COLLECTOR CURRENT, I C (mA)
COLLECTOR EMITTER VOLTAGE, V CE (VOLTS)
UTC
UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R203-013,B
UTC 2SD880
NPN EPITAXIAL PLANAR TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO., LTD.
3
QW-R203-013,B
很抱歉,暂时无法提供与“2SD880”相匹配的价格&库存,您可以联系我们找货
免费人工找货- 国内价格
- 5+1.19
- 20+1.085
- 100+0.98
- 500+0.875
- 1000+0.826
- 2000+0.791
- 国内价格
- 1+0.91
- 30+0.8775
- 100+0.845
- 500+0.78
- 1000+0.7475
- 2000+0.728
- 国内价格
- 1+0.91
- 30+0.8775
- 100+0.845
- 500+0.78
- 1000+0.7475
- 2000+0.728