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2SD882-C-T6C-K

2SD882-C-T6C-K

  • 厂商:

    UTC(友顺)

  • 封装:

  • 描述:

    2SD882-C-T6C-K - MEDIUM POWER LOW VOLTAGE TRANSISTOR - Unisonic Technologies

  • 详情介绍
  • 数据手册
  • 价格&库存
2SD882-C-T6C-K 数据手册
UNISONIC TECHNOLOGIES CO., LTD 2SD882 MEDIUM POWER LOW VOLTAGE TRANSISTOR 1 TO-126 NPN SILICON TRANSISTOR FEATURES * High current output up to 3A * Low saturation voltage * Complement to 2SB772 1 TO-126C APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator 1 TO-92NL 1 TO-251 1 TO-252 *Pb-free plating product number: 2SD882L ORDERING INFORMATION Order Number Normal Lead Free Plating 2SD882-x-T60-K 2SD882L-x-T60-K 2SD882-x-T6C-K 2SD882L-x-T6C-K 2SD882-x-TM3-T 2SD882L-x-TM3-T 2SD882-x-TN3-R 2SD882L-x-TN3-R 2SD882-x-TN3-T 2SD882L-x-TN3-T 2SD882-x-T9N-B 2SD882L-x-T9N-B 2SD882-x-T9N-K 2SD882L-x-T9N-K Package TO-126 TO-126C TO-251 TO-252 TO-252 TO-92NL TO-92NL Pin Assignment 1 2 3 E C B E C B B C E B C E B C E E C B E C B Packing Bulk Bulk Tube Tape Reel Tube Tape Box Bulk 2 SD882L-x-T60-R (1)Packing Type (2)Package Type (3)Rank (4)Lead Plating (1) B: Tape Box, K: Bulk, T: Tube, R: Tape Reel (2) T60: TO-126, T6C: TO-126C, TM3: TO-251, TN 3: TO-252, T9N: TO-92NL (3) x: refer to Classification of hFE2 (4) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R209-003,C 2SD882 PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation (Ta=25℃) TO-92NL TO-251/TO-252/ TO-126/TO-126C DC Pulse SYMBOL VCBO VCEO VEBO IC ICP IB PC NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified ) RATINGS 40 30 5 3 7 0.6 0.5 1 UNIT V V V A A A W W Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE1 DC Current Gain (Note 1) hFE2 Collector-Emitter Saturation Voltage VCE(SAT) Base-Emitter Saturation Voltage VBE(SAT) Current Gain Bandwidth Product fT Output Capacitance Cob Note 1: Pulse test: PW
2SD882-C-T6C-K
物料型号: - 2SD882 - 2SD882L(无铅镀层产品编号)

器件简介: 2SD882是一款NPN硅晶体管,属于中功率低电压晶体管。它具有高达3A的高电流输出和低饱和电压,是2SB772的互补产品。

引脚分配: - TO-126封装:E(发射极)、C(集电极)、B(基极) - TO-126C封装:E、C、B - TO-251封装:B、C、E - TO-252封装:B、C、E - TO-92NL封装:E、C、B

参数特性: - 集电极-基极电压(VCBO):40V - 集电极-发射极电压(VCEO):30V - 发射极-基极电压(VEBO):5V - 集电极电流(DC/脉冲Ic):3A/7A - 基极电流(IB):0.6A - 集电极耗散(Ta=25°C):TO-92NL为0.5W,TO-251/TO-252/TO-126/TO-126C为1W - 结温(TJ):+150°C - 存储温度(TSTG):-55~+150°C

功能详解: - 直流电流增益(hFE1):在VcE=2V,Ic=20mA时,最小值为30,典型值为200。 - 直流电流增益(hFE2):在VcE=2V,Ic=1A时,最小值为100,典型值为150,最大值为400。 - 集电极-发射极饱和电压(VCESAT):在Ic=2A,IB=0.2A时,典型值为0.3V,最大值为0.5V。 - 基极-发射极饱和电压(VBE(SAT)):在Ic=2A,B=0.2A时,典型值为1.0V,最大值为2.0V。 - 电流增益-带宽积(fr):在VcE=5V,Ic=0.1A时,典型值为80MHz。 - 输出电容(Cob):在VcB=10V,Ie=0,f=1MHz时,典型值为45pF。

应用信息: - 音频功率放大器 - DC-DC转换器 - 电压调节器

封装信息: - TO-126 - TO-126C - TO-251 - TO-252 - TO-92NL
2SD882-C-T6C-K 价格&库存

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